BTB08-600CW3 ON Semiconductor, BTB08-600CW3 Datasheet

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BTB08-600CW3

Manufacturer Part Number
BTB08-600CW3
Description
Triacs Silicon Bidirectional Thyristors
Manufacturer
ON Semiconductor
Datasheet

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Part Number:
BTB08-600CW3G
Manufacturer:
ON Semiconductor
Quantity:
5
BTB08-600CW3G,
BTB08-800CW3G
Triacs
Silicon Bidirectional Thyristors
where high noise immunity and high commutating di/dt are required.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
February, 2008 - Rev. 1
Peak Repetitive Off-State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On‐State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
Peak Non‐Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
Circuit Fusing Consideration (t = 10 ms)
Non-Repetitive Surge Peak Off-State
Voltage (T
Peak Gate Current (T
Peak Gate Power
(Pulse Width
Average Gate Power (T
Operating Junction Temperature Range
Storage Temperature Range
Designed for high performance full‐wave ac control applications
C
Blocking Voltage to 800 V
On‐State Current Rating of 8 A RMS at 25 C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt - 1500 V/ms minimum at 125 C
Minimizes Snubber Networks for Protection
Industry Standard TO‐220AB Package
High Commutating dI/dt - 3.0 A/ms minimum at 125 C
These are Pb-Free Devices
Semiconductor Components Industries, LLC, 2008
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
J
= 25 C)
DRM
= -40 to 125 C, Sine Wave,
and V
J
= 25 C, t = 10ms)
RRM
1.0 ms, T
Rating
for all types can be applied on a continuous basis. Blocking
J
= 125 C, t = 20ms)
BTB08-600CW3G
BTB08-800CW3G
J
(T
C
= 125 C)
= 80 C)
J
= 25 C unless otherwise noted)
C
= 80 C)
Symbol
I
P
V
V
V
T(RMS)
V
I
P
I
T
TSM
G(AV)
DRM,
DSM/
RRM
RSM
I
GM
T
GM
stg
2
J
t
V
-40 to +125
-40 to +150
DSM/
Value
+100
600
800
8.0
4.0
1.0
90
36
20
V
RSM
1
A
Unit
2
W
W
V
A
A
V
A
sec
C
C
*For additional information on our Pb-Free strategy and
BTB08-600CW3G
BTB08-800CW3G
soldering details, please download the ON Semicon‐
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
1
2
x
A
Y
WW
G
3
1
2
3
4
Device
MT2
ORDERING INFORMATION
600 thru 800 VOLTS
8 AMPERES RMS
4
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb-Free Package
http://onsemi.com
PIN ASSIGNMENT
CASE 221A
TO-220AB
STYLE 4
TRIACS
TO-220AB
TO-220AB
(Pb-Free)
(Pb-Free)
Package
Main Terminal 1
Main Terminal 2
Main Terminal 2
Publication Order Number:
Gate
BTB08-600CW3/D
BTB08-xCWG
G
MARKING
DIAGRAM
50 Units / Rail
50 Units / Rail
MT1
AYWW
Shipping

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BTB08-600CW3 Summary of contents

Page 1

... CASE 221A 2 STYLE Assembly Location Y = Year WW = Work Week G = Pb-Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device Package Shipping TO-220AB 50 Units / Rail (Pb-Free) TO-220AB 50 Units / Rail (Pb-Free) Publication Order Number: BTB08-600CW3/D ...

Page 2

... BTB08-600CW3G, BTB08-800CW3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (V = Rated Gate Open) D DRM RRM ON CHARACTERISTICS Peak On‐State Voltage (Note 2) ...

Page 3

... BTB08-600CW3G, BTB08-800CW3G Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On State Voltage TM I Holding Current H Quadrant II (-) I GATE ...

Page 4

... BTB08-600CW3G, BTB08-800CW3G 125 120 115 = 180 110 105 100 RMS ON‐STATE CURRENT (AMP) T(RMS) Figure 1. RMS Current Derating 100 TYPICAL MAXIMUM @ 0.1 0 0.5 1 1 INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) T Figure 3. On‐State Characteristics 120, 90, 60, 30 ...

Page 5

... BTB08-600CW3G, BTB08-800CW3G 100 -40 -25 - JUNCTION TEMPERATURE ( C) J Figure 6. Typical Gate Trigger Current Variation 5000 200 V RMS ADJUST FOR CHARGE TRIGGER CONTROL CHARGE NON‐POLAR Note: Component values are for verification of rated (di/dt) Figure 9 ...

Page 6

... BTB08-600CW3G, BTB08-800CW3G Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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