SI2343DS Vishay, SI2343DS Datasheet

no-image

SI2343DS

Manufacturer Part Number
SI2343DS
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2343DS-T1-E3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI2343DS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2343DS-T1-E3
Quantity:
70 000
Part Number:
SI2343DS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
Document Number: 72079
s-22199—Rev. A, 25-Nov-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
DS
-30
(V)
J
a, b
0.053 @ V
0.086@ V
= 150_C)
a
Parameter
Parameter
r
DS(on)
_
GS
a, b
a, b
GS
(W)
= -4.5 V
= -10 V
P-Channel 30-V (D-S) MOSFET
a, b
A
Steady State
Steady State
T
T
T
T
t v 5 sec
= 25_C UNLESS OTHERWISE NOTED)
A
A
A
A
G
S
= 25_C
= 70_C
= 25_C
= 70_C
New Product
I
D
-4.0
-3.1
1
2
(A)
Si2343DS (F3)*
*Marking Code
(SOT-23)
Top View
TO-236
Symbol
Symbol
T
R
R
V
V
J
I
P
, T
DM
I
I
thJA
thJF
3
DS
GS
D
S
D
stg
D
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
D PA Switch
Typical
5 sec
- 4.0
-3.2
-1.0
1.25
120
0.8
75
40
-55 to 150
$20
-30
-15
Steady State
Vishay Siliconix
Maximum
-3.1
-2.5
-0.6
0.75
0.48
100
166
50
Si2343DS
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
V
A
1

Related parts for SI2343DS

SI2343DS Summary of contents

Page 1

... Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 72079 s-22199—Rev. A, 25-Nov-02 New Product I (A) D -4.0 -3.1 TO-236 (SOT-23 Top View Si2343DS (F3)* *Marking Code = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C ...

Page 2

... Si2343DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate-Threshold Voltage V GS(th) Gate-Body Leakage I Zero Gate Voltage Drain Current I a On-State Drain Current I D(on) a Drain-Source On-Resistance r DS(on) a Forward Transconductance Diode Forward Voltage V b Dynamic Total Gate Charge ...

Page 3

... New Product 0.0 1000 800 600 400 200 1.6 1.4 1.2 1.0 0.8 0 -50 Si2343DS Vishay Siliconix Transfer Characteristics T = 125_C C 25_C -55 _C 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si2343DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 = 250 0.4 0.2 0.0 -0.2 -0.4 -50 - Temperature (_C) J www.vishay.com 4 New Product 0.12 0.10 0.08 0.06 0. 25_C J 0.02 0.00 0 1.0 1.2 1 100 125 150 0.01 Safe Operating Area ...

Page 5

... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72079 s-22199—Rev. A, 25-Nov-02 New Product - Square Wave Pulse Duration (sec) Si2343DS Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120_C/W thJA ( ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

Related keywords