SI2308DS Vishay, SI2308DS Datasheet
SI2308DS
Available stocks
Related parts for SI2308DS
SI2308DS Summary of contents
Page 1
... N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V (V) r (W) DS DS(on Ordering Information: Si2308DS-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation ...
Page 2
... Si2308DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a a On-State Drain Current On State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance ...
Page 3
... 400 300 200 100 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 −50 Si2308DS Vishay Siliconix Transfer Characteristics T = 125_C C 25_C −55_C − Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs ...
Page 4
... Si2308DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.00 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 mA D 0.2 −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient ...
Page 5
... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...