SI2316BDS Vishay, SI2316BDS Datasheet - Page 3

• Manufacturer Part Number: SI2316BDS
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70445
S-71330-Rev. A, 02-Jul-07
0.20
0.16
0.12
0.08
0.04
0.00
10
20
15
10
On-Resistance vs. Drain Current and Gate Voltage
5
0
8
6
4
2
0
0
0
0
I
D
= 3.9 A
V
4
1
DS
Output Characteristics
2
Q
g
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
V
- Drain Current (A)
Gate Charge
DS
V
V
2
8
GS
GS
= 16 V
= 4.5 V
= 10 thru 5 V
4
V
V
DS
GS
= 24 V
12
3
= 10 V
V
V
GS
GS
6
= 4 V
= 3 V
16
4
New Product
20
8
5
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
3
2
1
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
T
V
V
1
J
6
DS
GS
Transfer Characteristics
T
= 125 °C
J
0
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
T
C
C
J
oss
iss
= 25 °C
Capacitance
25
12
2
50
Vishay Siliconix
V
Si2316BDS
GS
V
18
3
GS
75
= 10 V, I
= 4.5 V, I
T
www.vishay.com
100
J
= - 55 °C
24
D
4
= 3.9 A
D
125
= 3.3 A
150
30
5
3