SI2301DS Vishay, SI2301DS Datasheet
SI2301DS
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SI2301DS Summary of contents
Page 1
... TO-236 (SOT-23 Top View Si2301DS (A1)* *Marking Code = 25_C UNLESS OTHERWISE NOTED 25_C 70_C 25_C 70_C A Si2301DS Vishay Siliconix Ordering Information: Si2301DS-T1 Symbol Limit " 2 1 1 150 ...
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... Si2301DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current a a Drain-Source On-Resistance Drain Source On Resistance a Forward Transconductance ...
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... Q - Total Gate Charge (nC) g Document Number: 70627 S-31990—Rev. E, 13-Oct- Si2301DS Vishay Siliconix Transfer Characteristics 55_C C 8 25_C 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Capacitance 1000 800 600 C iss ...
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... Si2301DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.3 0 250 mA D 0.1 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...