TP0610K Vishay, TP0610K Datasheet - Page 4

• Manufacturer Part Number: TP0610K
• Description: P-channel 60-v D-s Mosfet
• Manufacturer: Vishay

TP0610K
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package
Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71411.
www.vishay.com
4
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
−0.0
−0.1
−0.2
−0.3
100
0.5
0.4
0.3
0.2
0.1
10
1
0.00
−50
Threshold Voltage Variance Over Temperature
0.01
0.1
2
1
V
10
−25
Source-Drain Diode Forward Voltage
GS
T
−4
J
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
= 0 V
V
= 125_C
0.3
SD
T
J
0
I
− Source-to-Drain Voltage (V)
D
− Junction Temperature (_C)
= 250 mA
25
0.6
10
Single Pulse
−3
50
T
0.9
Normalized Thermal Transient Impedance, Junction-to-Ambient
J
75
T
= −55_C
J
= 25_C
100
1.2
10
−2
125
1.5
150
Square Wave Pulse Duration (sec)
10
−1
2.5
1.5
0.5
10
1
8
6
4
2
0
3
2
1
0
0.01
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-Source Voltage
0.1
2
V
GS
I
10
D
− Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
= 200 mA
DM
JM
Time (sec)
4
1
− T
t
1
A
= P
t
T
2
A
DM
= 25_C
Z
S-50129—Rev. D, 24-Jan-05
6
thJA
thJA
100
10
Document Number: 71411
t
t
1
2
(t)
I
= 350_C/W
D
= 500 mA
8
100
600
10
600