TP0101TS Vishay, TP0101TS Datasheet - Page 4

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TP0101TS

Manufacturer Part Number
TP0101TS
Description
P-channel 20-v D-s Mosfet, Low-threshold
Manufacturer
Vishay
Datasheet

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TP0101T/TS
Vishay Siliconix
www.vishay.com
11-4
TYPICAL CHARACTERISTICS (T
–0.06
–0.16
0.01
0.01
0.1
0.34
0.24
0.14
0.04
0.1
10
1
2
1
–50
0.0
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Source-Drain Diode Forward Voltage
T
J
= 50_C
0.5
V
SD
T
0
J
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
Threshold Voltage
1.0
T
J
10
= 25_C
–3
50
I
D
= –50 mA
1.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
A
= 25_C UNLESS OTHERWISE NOTED)
100
2.0
10
–2
150
2.5
Square Wave Pulse Duration (sec)
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
–1
0.001
0
On-Resistance vs. Gate-to-Source Voltage
0.01
1
V
GS
– Gate-to-Source Voltage (V)
Single Pulse Power
Single Pulse
1
T
0.1
2
Time (sec)
A
= 25_C
I
D
3
= –0.5 A
1
S-04279—Rev. D, 16-Jul-01
Document Number: 70229
10
4
10
30
5
100

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