SI4401BDY Vishay, SI4401BDY Datasheet - Page 3

no-image

SI4401BDY

Manufacturer Part Number
SI4401BDY
Description
P-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4401BDY
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4401BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
24 887
Part Number:
SI4401BDY-T1-E3
Manufacturer:
NICCOMPHIA
Quantity:
30 000
Part Number:
SI4401BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4401BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4401BDY-T1-E3
0
Company:
Part Number:
SI4401BDY-T1-E3
Quantity:
285
Company:
Part Number:
SI4401BDY-T1-E3
Quantity:
70 000
Part Number:
SI4401BDY-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
47 736
Part Number:
SI4401BDY-T1-GE3
Manufacturer:
SILICON
Quantity:
239
Part Number:
SI4401BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4401BDY-T1-GE3
Quantity:
20 000
Company:
Part Number:
SI4401BDY-T1-GE3
Quantity:
70 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73140
S-70316-Rev. B, 12-Feb-07
0.030
0.025
0.020
0.015
0.010
0.005
0.000
50
10
1
6
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
5
= 10.5 A
On-Resistance vs. Drain Current
0.2
= 15 V
V
10
V
GS
T
SD
10
Q
J
= 4.5 V
= 150 °C
g
-
0.4
-
I
D
Source-to-Drain Voltage (V)
Gate Charge
15
Total Gate Charge (nC)
-
20
Drain Current (A)
0.6
20
30
25
0.8
T
V
GS
J
30
= 25 °C
= 10 V
40
1.0
35
New Product
1.2
40
50
4500
4000
3500
3000
2500
2000
1500
1000
0.05
0.04
0.03
0.02
0.01
0.00
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
5
= 10.5 A
C
= 10 V
2
oss
T
V
V
10
0
J
GS
DS
-
Junction Temperature (°C)
-
-
Gate-to-Source Voltage (V)
Capacitance
25
15
C
Drain-to-Source Voltage (V)
4
iss
I
D
50
Vishay Siliconix
20
= 10.5 A
C
Si4401BDY
rss
6
75
25
www.vishay.com
100
30
8
125
35
150
10
40
3

Related parts for SI4401BDY