SI4447DY Vishay, SI4447DY Datasheet

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SI4447DY

Manufacturer Part Number
SI4447DY
Description
P-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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SI4447DY
Manufacturer:
SILICON LABS/芯科
Quantity:
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Part Number:
SI4447DY-T1-E3
Manufacturer:
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Manufacturer:
VISHAY
Quantity:
180
Part Number:
SI4447DY-T1-E3
Manufacturer:
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Quantity:
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Part Number:
SI4447DY-T1-E3
Quantity:
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Part Number:
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Manufacturer:
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Quantity:
20 000
Part Number:
SI4447DY-T1-GE3
0
Notes
a.
Document Number: 73662
S-60178—Rev. A, 13-Feb-06
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipatio
Maximum Power Dissipatio
Operating Junction and Storage Temperature Range
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Surface Mounted on 1” x 1” FR4 Board.
Ordering Information: Si4447DY–T1–E3 (Lead (Pb)–free)
V
DS
–40
40
(V)
G
S
S
S
Parameter
Parameter
1
2
3
4
a
a
J
J
Top View
= 150 _C)
= 150 _C)
0.072 at V
a
a
0.054 at V
SO-8
r
DS(on)
a
a
GS
GS
P-Channel 40-V (D-S) MOSFET
(W)
= –4.5 V
= –10 V
Steady State
Steady State
8
7
6
5
t v 10 sec
L = 0 1 mH
L = 0.1 mH
T
T
T
T
A
A
a
A
A
= 25 _C
= 70 _C
= 25 _C
= 70 _C
D
D
D
D
I
D
–4.5
–3.9
(A)
Symbol
Symbol
T
R
R
R
J
V
V
E
I
I
P
P
, T
thJA
thJF
DM
I
I
I
AS
GS
DS
AS
New Product
D
D
S
D
D
Q
stg
g
_
(Typ)
9
9
10 secs
Typ
50
30
85
–4.5
–3.6
–1.7
1.3
2
D TrenchFETr Power MOSFET
D 100 % R
D UIS Tested
D CCFL Inverter
–55 to 150
"16
–40
30
16
13
g
Tested
Steady State
G
Vishay Siliconix
Max
62.5
110
40
P-Channel MOSFET
–3.3
–2.7
–0.9
1.1
0.7
Si4447DY
S
D
www.vishay.com
Unit
_C/W
RoHS
C/W
Unit
mJ
_C
W
W
V
V
A
A
1

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SI4447DY Summary of contents

Page 1

... Top View Ordering Information: Si4447DY–T1–E3 (Lead (Pb)–free) Parameter Drain-Source Voltage Gate-Source Voltage T = 150 _C) = 150 _C Continuous Drain Current (T Continuous Drain Current ( Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si4447DY Vishay Siliconix _ Parameter Symbol Static Gate Threshold Voltage V Temperature Coefficient Temperature Coefficient GS(th) Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 73662 S-60178—Rev. A, 13-Feb-06 New Product _ 1240 1116 0.30 0.25 0. 0.15 0.10 0.05 0.00 1.0 1.2 1.4 Si4447DY Vishay Siliconix Capacitance 992 C iss 868 744 620 496 372 248 C oss 124 C rss – Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si4447DY Vishay Siliconix Threshold Voltage 0.6 0.4 = 250 0.2 0.0 –0.2 –0.4 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – www.vishay.com 4 New Product 100 125 150 Safe Operating Area, Junction-to-Ambient ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73662. Document Number: 73662 S-60178—Rev. A, 13-Feb-06 New Product _ –2 – Square Wave Pulse Duration (sec) Si4447DY Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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