SI4943CDY Vishay, SI4943CDY Datasheet - Page 4

• Manufacturer Part Number: SI4943CDY
• Description: Dual P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Si4943CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
2.5
2.3
2.1
1.9
1.7
1.5
1.3
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
T
J
V
0.3
0
= 150 °C
SD
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
0.01
100
0.1
10
T
1
100
0.1
J
0.9
= 25 °C
Safe Operating Area, Junction-to-Ambient
Limited by R
* V
Single Pulse
T
125
GS
A
= 25 °C
> minimum V
V
New Product
150
DS
1.2
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which R
BVDSS
Limited
10
DS(on)
0.04
0.03
0.02
0.01
100
80
60
40
20
0
0
0
is specified
0 .
0
1 s
10 s
DC
1 ms
10 ms
100 ms
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100
4
V
0.01
GS
- Gate-to-Source Voltage (V)
8
Time (s)
0.1
S-80638-Rev. A, 24-Mar-08
Document Number: 69985
12
T
T
I
1
D
J
J
= 25 °C
16
= 8.3 A
= 125 °C
20
1
0