SI4463BDY Vishay, SI4463BDY Datasheet - Page 3

• Manufacturer Part Number: SI4463BDY
• Description: P-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72789
S-71598-Rev. B, 30-Jul-07
0.04
0.03
0.02
0.01
0.00
50
10
1
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 13.7 A
5
0.2
On-Resistance vs. Drain Current
V
= 10 V
10
GS
V
T
SD
J
10
= 2.5 V
Q
= 150 °C
g
– Source-to-Drain Voltage (V)
I
0.4
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
15
20
0.6
20
30
25
T
0.8
J
V
= 25 °C
V
GS
GS
30
= 4.5 V
40
= 10 V
1.0
35
New Product
50
1.2
40
5000
4000
3000
2000
1000
0.05
0.04
0.03
0.02
0.01
0.00
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
- 50
0
0
I
On-Resistance vs. Gate-to-Source Voltage
D
On-Resistance vs. Junction Temperature
= 5 A
V
I
- 25
D
C
GS
1
rss
= 13.7 A
= 10 V
4
T
V
V
0
2
J
DS
GS
– Junction Temperature (°C)
C
oss
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
I
D
25
Capacitance
= 13.7 A
3
8
50
4
Vishay Siliconix
Si4463BDY
12
75
5
C
iss
www.vishay.com
100
6
16
125
7
150
20
8
3