SUD50P10-43L Vishay, SUD50P10-43L Datasheet - Page 4

• Manufacturer Part Number: SUD50P10-43L
• Description: P-channel 100-v D-s 175c Mosfet
• Manufacturer: Vishay

SUD50P10-43L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
40
10
1
- 50
0.00
- 25
Source-Drain Diode Forward Voltage
0.2
0
V
SD
T
Threshold Voltage
T
J
- Source-to-Drain Voltage (V)
25
J
0.4
= 150 °C
- Temperature (°C)
50
0.6
75
I
D
*Limited by r
= 250 µA
0.001
100
0.8
0.01
100
0.1
10
T
1
0
J
1 .
125
= 25 °C
Safe Operating Area, Junction-to-Ambient
*V
1.0
DS(on)
GS
150
V
minimum V
DS
New Product
1.2
175
1
- Drain-to-Source Voltage (V)
Single Pulse
T
A
= 25 °C
GS
at which r
1
0
DS(on)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
35
30
25
20
15
10
100
5
0
0.01
is specified
2
100 µs
1 ms
10 ms
100 ms
1 s
10 s
dc
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
3
1
0.1
0
0
0
V
4
GS
- Gate-to-Source Voltage (V)
Time (sec)
5
1
6
S-71660-Rev. B, 06-Aug-07
Document Number: 73444
T
10
A
= 125 °C
7
T
A
8
= 25 °C
100
9
1000
10