SUD45P03-10 Vishay, SUD45P03-10 Datasheet
SUD45P03-10
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SUD45P03-10 Summary of contents
Page 1
... P-Channel MOSFET _ Symbol 25_C 100_C 25_C 25_C stg Symbol Typical R thJA R thJC SUD45P03-10 Vishay Siliconix Limit Unit –30 V "20 –15 –8 A –100 – –55 to 150 Maximum Unit 30 _ _C/W 1.8 www.vishay.com 2-1 ...
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... SUD45P03-10 Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge c Gate-Source Charge c Gate-Drain Charge ...
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... Drain-to-Source Voltage (V) DS Document Number: 70766 S-02596—Rev. D, 21-Nov- –55_C C 25_C 125_C SUD45P03-10 Vishay Siliconix Transfer Characteristics 100 125_C C 20 25_C –55_C – Gate-to-Source Voltage (V) GS On-Resistance vs ...
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... SUD45P03-10 Vishay Siliconix On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0.4 0.0 –50 – – Junction Temperature (_C) J Maximum Drain Current vs. Ambiemt Temperature – Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 –4 – www.vishay.com ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...