SUB75N06-08 Vishay, SUB75N06-08 Datasheet - Page 2

• Manufacturer Part Number: SUB75N06-08
• Description: N-channel 60-v D-s , 175c Mosfet
• Manufacturer: Vishay

Notes
a.
b.
c.
www.vishay.com S FaxBack 408-970-5600
2-2
SUP/SUB75N06-08
Vishay Siliconix
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test: pulse width v 300 msec, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
b
Parameter
a
c
c
c
c
c
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
I
V
RM(REC)
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
C
GS(th)
C
V
D(on)
C
Q
Q
d(on)
d(off)
GSS
I
DSS
DSS
Q
Q
g
SM
I
t
oss
t
t
SD
iss
rss
S
rr
fs
gs
gd
r
f
rr
g
C
I
V
V
V
V
D
V
V
DS
= 25_C)
DS
GS
GS
DS
DS
^ 75 A, V
GS
= 60 V, V
I
= 60 V
= 10 V, I
= 10 V, I
V
= 30 V
F
F
V
V
V
= 0 V, V
V
V
V
DS
V
V
DD
DD
= 75 A, di/dt = 100 A/ms
I
DS
Test Condition
GS
F
DS
DS
GS
DS
= 75 A , V
= 0 V, V
= 30 V, R
= 30 V, R
= V
= 0 V, I
= 60 V, V
,
= 5 V, V
= 10 V, I
= 15 V, I
,
,
b
V
GEN
V
D
D
GS
DS
GS
GS
GS
GS
= 30 A, T
= 30 A, T
, I
= 0 V, T
= 25 V, f = 1 MHz
= 10 V, R
= 0 V, T
= 10 V, I
GS
D
D
GS
L
L
GS
D
= 250 mA
D
GS
= 250 mA
= "20 V
= 0.47 W
= 0.47 W
= 30 A
= 30 A
= 10 V
= 0 V
= 0 V
J
J
J
J
= 125_C
= 175_C
G
= 175_C
D
D
= 125_C
= 2.5 W
m
= 75 A
Min
120
2.0
60
30
0.007
Typ
4800
910
270
3.0
1.0
0.2
85
28
26
20
95
65
20
67
6
S-05111—Rev. F, 10-Dec-01
Document Number: 70283
"100
Max
0.008
0.012
0.016
0.48
150
120
200
120
240
120
4.0
1.3
50
40
60
75
1
8
Unit
nA
mA
m
pF
nC
mC
ns
ns
V
A
W
S
A
V
A