SI1305DL Vishay, SI1305DL Datasheet

Page 1

... DS DS(on) 0.280 @ V = −4 −8 0.380 @ V = −2 0.530 @ V = −1 Ordering Information: Si1305DL--T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current a Continuous Diode Current (Diode Conduction) ...

Page 2

... Si1305DL Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... J 0.01 0.001 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Document Number: 71076 S-51075—Rev. D, 13-Jun- 0.8 1.0 1.2 Si1305DL Vishay Siliconix Capacitance 350 300 C iss 250 200 C 150 oss C 100 rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si1305DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...