SI1469DH Vishay, SI1469DH Datasheet - Page 4

• Manufacturer Part Number: SI1469DH
• Description: P-channel 20-v G-s Mosfet
• Manufacturer: Vishay

Si1469DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.01
0.4
0.3
0.2
0.1
0.0
0.1
10
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
0.3
T
J
V
= 150 °C
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
0.6
- Temperature (°C)
T
50
J
= 25 °C
0.9
75
0.01
0.1
10
1
I
100
0.01
D
= 5 mA
I
1.2
D
Limited by r
Safe Operating Area, Junction-to-Ambient
= 250 µA
*V
125
GS
V
1.5
minimum V
150
Single Pulse
0.1
DS
DS(on)
T
C
- Drain-to-Source Voltage (V)
= 25 °C
GS
at which r
1
DS(on)
0.5
0.4
0.3
0.2
0.1
0.0
30
24
18
12
6
0
10
0
0
is specified
0 .
0
I
On-Resistance vs. Gate-to-Source Voltage
D
1
Single Pulse Power, Junction-to-Ambient
= 2 A
1 ms
10 ms
100 ms
1 s
10 s
dc
2
100
V
0.01
GS
25 °C
- Gate-to-Source Voltage (V)
4
Time (sec)
125 °C
0.1
S-70195-Rev. A, 29-Jan-07
Document Number: 74441
6
1
8
10
1
0