SI1013R Vishay, SI1013R Datasheet - Page 2

• Manufacturer Part Number: SI1013R
• Description: P-channel 1.8-v G-s Mosfet
• Manufacturer: Vishay

Si1013R/X
Vishay Siliconix
Notes
a.
b.
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
www.vishay.com
2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
GS
1.0
= 5 thru 3 V
0.8
0.6
0.4
0.2
0.0
0.0
b
Parameter
0.5
V
a
a
DS
Output Characteristics
a
– Drain-to-Source Voltage (V)
1.0
a
1.5
_
2.0
Symbol
V
r
I
DS(on)
DS(on)
t
t
I
I
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
SD
t
t
gd
fs
gs
r
f
g
2.5
2.5 V
1.8 V
2 V
_
3.0
V
I
D
New Product
DS
^ –200 mA, V
V
= –10 V, V
DS
V
V
V
V
GS
= –16 V, V
V
GS
GS
V
I
DS
V
V
V
S
V
DS
DS
DD
DD
DS
Test Condition
DS
= –150 mA, V
= –1.8 V, I
= –4.5 V, I
= –2.5 V, I
= –10 V, I
= –5 V, V
= V
= –16 V, V
= –10 V, R
= –10 V, R
= 0 V, V
GS
GS
GEN
GS
= –4.5 V, I
, I
D
D
D
= –4.5 V, R
= 0 V, T
GS
GS
D
D
= –250 mA
= –300 m A
= –250 mA
= –150 m A
GS
= –350 mA
L
L
GS
= "4.5 V
= –4.5 V
= 47 W
= 47 W
= 0 V
1000
= 0 V
D
800
600
400
200
J
= –250 mA
= 85_C
0
0.0
G
= 10 W
0.5
V
GS
Transfer Characteristics
–0.45
Min
–700
– Gate-to-Source Voltage (V)
1.0
1.5
Typ
1500
–0.3
–0.8
150
450
"1
0.8
1.2
1.8
0.4
35
11
25_C
5
9
T
S-02464—Rev. A, 25-Oct-00
J
Document Number: 71167
= –55_C
2.0
Max
–100
–1.2
"2
1.2
1.6
2.7
–5
2.5
125_C
Unit
mA
mA
nA
mA
pC
ns
W
V
S
V
3.0