SI3483DV Vishay, SI3483DV Datasheet - Page 2

• Manufacturer Part Number: SI3483DV
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Notes
a.
b.
www.vishay.com
2
Si3483DV
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
25
20
15
10
5
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
V
− Drain-to-Source Voltage (V)
a
GS
= 10 thru 5 V
2
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
3 V
SD
t
t
4
rr
fs
gs
gd
r
f
g
)
4 V
5
V
DS
V
I
D
DS
^ −1 A, V
= −15 V, V
I
F
V
= −30 V, V
V
V
V
V
V
V
V
DS
= −1.7 A, di/dt = 100 A/ms
V
GS
GS
I
DS
DS
S
DS
DD
DD
Test Condition
DS
= −1.7 A, V
v −5 V, V
= V
= −10 V, I
= −4.5 V, I
= −15 V, I
= −30 V, V
= −15 V, R
= −15 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= −10 V, I
= −10 V, R
D
= 0 V, T
GS
GS
D
= −250 mA
D
D
GS
GS
L
L
= −6.2 A
= −6.2 A
= −5.0 A
= "20 V
= 15 W
= 15 W
= −10 V
= 0 V
= 0 V
J
D
25
20
15
10
= 85_C
g
5
0
= −6.2 A
0.0
= 6 W
0.5
V
GS
1.0
Transfer Characteristics
Min
−1.0
−25
− Gate-to-Source Voltage (V)
1.5
25_C
T
C
2.0
0.028
0.042
Typ
= 125_C
−0.8
3.6
14
23
10
10
71
45
45
6
S-40238—Rev. B, 16-Feb-04
Document Number: 72078
2.5
"100
Max
0.035
0.053
−1.2
−55_C
110
3.0
−3
−1
−5
35
15
15
70
70
3.5
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
4.0