SI5424DC Vishay, SI5424DC Datasheet

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SI5424DC

Manufacturer Part Number
SI5424DC
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5424DC-T1-GE3
Manufacturer:
TI
Quantity:
137
Part Number:
SI5424DC-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a.
b.
c.
d.
e.
f.
Document Number: 73776
S–60216—Rev. A, 20-Feb-06
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Package limited.
Surface Mounted on 1” x 1” FR4 Board.
t = 5 sec.
See Solder Profile (http://www.vishay.com/doc?73257). The ChipFET 1206–8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Maximum under steady state conditions is 80 _C/W.
DS
Ordering Information: Si5424DC–T1–E3 (Lead (Pb)–free)
30
30
(V)
0.030 at V
0.024 at V
D
r
ChipFET 1206-8
DS(on)
D
J
J
Bottom View
= 150 _C)
= 150 _C)
GS
GS
b, f
D
D
Parameter
Parameter
(W)
= 4.5 V
= 10 V
S
D
D
1
N-Channel 30-V (D-S) MOSFET
G
I
d, e
D
(A)
6
6
a
Steady State
Q
T
T
T
T
T
T
T
T
L = 0 1 mH
L = 0.1 mH
T
T
t p 5 sec
A
A
A
A
A
C
C
C
C
C
g
New Product
11 nC
11 nC
= 25 _C
= 70 _C
= 25 _C
= 25 _C
= 70 _C
= 25 _C
= 70 _C
= 25 _C
= 25 _C
= 70 _C
(Typ)
_
Marking Code
AF
XXX
Part # Code
Symbol
Symbol
D TrenchFETr Power MOSFET
D Load Switch
T
R
R
J
V
V
E
I
I
P
P
, T
DM
I
I
I
I
AS
thJA
thJF
– Notebook PC
DS
GS
D
D
AS
S
S
D
D
stg
Lot Traceability
and Date Code
Typical
40
15
– 55 to 150
Limit
2.1
2.5
1.6
" 25
5.2
12.8
6.25
260
4.0
30
6
6
6
6
40
16
b, c
b, c
b, c
G
a
a
a
a
a
N-Channel MOSFET
Maximum
Vishay Siliconix
50
20
D
S
Si5424DC
www.vishay.com
Unit
Unit
_C/W
_C/W
mJ
_C
_C
W
W
RoHS
V
V
A
A
1

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SI5424DC Summary of contents

Page 1

... GS ChipFET 1206 Bottom View Ordering Information: Si5424DC–T1–E3 (Lead (Pb)–free) Parameter Drain-Source Voltage Gate-Source Voltage = 150 _C) = 150 _C) Continuous Drain Current (T Continuous Drain Current ( Pulsed Drain Current Continuous Source-Drain Diode Current Continuous Source Drain Diode Current ...

Page 2

... Si5424DC Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance ...

Page 3

... Document Number: 73776 S–60216—Rev. A, 20-Feb-06 New Product 2.4 3 Si5424DC Vishay Siliconix Transfer Characteristics 125 0.0 0.6 1.2 1.8 V – Gate-to-Source Voltage (V) GS Capacitance 1500 1200 ...

Page 4

... Si5424DC Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 2.0 1.8 = 250 mA 1 1.4 1.2 1.0 0.8 0.6 0.4 –50 – – Temperature (_C) J www.vishay.com 4 New Product _ 1.0 1.2 1.4 100 125 150 Safe Operating Area, Junction-to-Ambient ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73776 S–60216—Rev. A, 20-Feb-06 New Product 125 150 0 Si5424DC Vishay Siliconix Power De-Rating 100 125 150 T – Case Temperature (_C) C www.vishay.com ...

Page 6

... Si5424DC Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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