SI5402BDC Vishay, SI5402BDC Datasheet - Page 3

• Manufacturer Part Number: SI5402BDC
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 73051
S-41495—Rev. A, 09-Jun-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.05
0.04
0.03
0.02
0.01
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
0.2
Source-Drain Diode Forward Voltage
= 4.9 A
On-Resistance vs. Drain Current
V
= 15 V
V
GS
4
2
GS
V
0.4
SD
Q
= 4.5 V
= 10 V
g
T
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
D
J
= 150_C
0.6
− Drain Current (A)
Gate Charge
8
4
0.8
12
6
1.0
T
J
= 25_C
1.2
16
8
1.4
1.6
20
10
New Product
0.10
0.08
0.06
0.04
0.02
0.00
800
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
= 4.9 A
5
= 10 V
2
T
V
V
C
0
J
GS
DS
oss
− Junction Temperature (_C)
C
iss
− Gate-to-Source Voltage (V)
10
− Drain-to-Source Voltage (V)
25
Capacitance
4
I
D
Vishay Siliconix
50
15
= 4.9 A
Si5402BDC
6
75
20
C
rss
100
www.vishay.com
8
25
125
150
10
30
3