SI6993DQ Vishay, SI6993DQ Datasheet - Page 3

• Manufacturer Part Number: SI6993DQ
• Description: Dual P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72369
S-31912—Rev. A, 15-Sep-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
0.1
30
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 4.7 A
On-Resistance vs. Drain Current
5
= 15 V
0.3
3
T
V
V
J
SD
GS
Q
= 150_C
g
= 4.5 V
- Source-to-Drain Voltage (V)
I
10
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
0.6
6
15
0.9
9
V
GS
T
20
J
= 10 V
= 25_C
1.2
12
25
1.5
30
15
New Product
2000
1600
1200
0.15
0.12
0.09
0.06
0.03
0.00
1.60
1.40
1.20
1.00
0.80
0.60
800
400
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
C
GS
= 4.7 A
rss
5
= 10 V
2
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
10
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
4
C
oss
I
D
Vishay Siliconix
C
= 4.7 A
50
15
iss
6
75
Si6993DQ
20
100
8
www.vishay.com
25
125
150
10
30
3