SI6913DQ Vishay, SI6913DQ Datasheet

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SI6913DQ

Manufacturer Part Number
SI6913DQ
Description
Dual P-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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SI6913DQ-T1-E3
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Notes
a.
Document Number: 72368
S-31914—Rev. A, 15-Sep-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
-12
G
D
S
S
(V)
1
1
1
1
Ordering Information: Si6913DQ-T1
J
1
2
3
4
ti
D
t A bi
TSSOP-8
Top View
J
J
0.021 @ V
0.028 @ V
0.037 @ V
a
a
= 150_C)
= 150_C)
t
a
a
Parameter
Parameter
r
DS(on)
Dual P-Channel 12-V (D-S) MOSFET
a
a
GS
GS
GS
(W)
= -4.5 V
= -2.5 V
= -1.8 V
8
7
6
5
D
S
S
G
a
2
2
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
New Product
I
= 25_C
= 70_C
= 25_C
= 70_C
D
-5.8
-5.0
-4.4
(A)
G
1
P-Channel MOSFET
Symbol
Symbol
T
R
R
R
V
V
J
I
P
P
, T
DM
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
S
D
1
1
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
D Battery Switch
10 secs
Typical
1.14
0.73
-5.8
-4.6
-1.0
124
86
52
G
2
P-Channel MOSFET
-55 to 150
"8
-12
-30
Steady State
S
D
Maximum
2
2
Vishay Siliconix
0.83
0.53
-4.9
-3.9
-0.7
110
150
65
Si6913DQ
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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SI6913DQ Summary of contents

Page 1

... Top View Ordering Information: Si6913DQ-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si6913DQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72368 S-31914—Rev. A, 15-Sep-03 New Product 3500 3000 2500 2000 1500 = 2.5 V 1000 = 4 25_C J 1.2 1.5 Si6913DQ Vishay Siliconix Capacitance C iss C oss C 500 rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1. 4 ...

Page 4

... Si6913DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 0 400 mA D 0.1 0.0 -0.1 -0.2 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 Safe Operating Area, Junction-to-Case ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72368 S-31914—Rev. A, 15-Sep-03 New Product - Square Wave Pulse Duration (sec) Si6913DQ Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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