SI6413DQ Vishay, SI6413DQ Datasheet

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SI6413DQ

Manufacturer Part Number
SI6413DQ
Description
P-channel 1.8-v G-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6413DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 815
Part Number:
SI6413DQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72084
S-22384—Rev. A, 30-Dec-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
Surface Mounted on 1” x 1” FR4 Board.
DS
-20
G
(V)
D
S
S
1
2
3
4
D
Si6413DQ
TSSOP-8
Top View
J
a
0.010 @ V
0.013 @ V
0.016 @ V
= 150_C)
a
Parameter
Parameter
r
DS(on)
_
GS
GS
GS
a
P-Channel 1.8-V (G-S) MOSFET
(W)
= -4.5 V
= -2.5 V
= -1.8 V
8
7
6
5
D
S
S
D
a
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
-8.8
- 7.6
- 6.8
(A)
G
P-Channel MOSFET
Symbol
Symbol
T
R
R
V
J
V
I
P
DM
, T
I
I
thJA
thJF
DS
GS
D
S
D
stg
S*
D
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
D PA Switch
D Charger Switch
10 secs
Typical
* Source Pins 2, 3, 6 and 7
must be tied common.
-1.35
- 8.8
-7.0
100
1.5
1.0
60
35
-55 to 150
-20
-30
"8
Steady State
Maximum
Vishay Siliconix
-0.95
-7.2
-5.7
1.05
0.67
120
83
45
Si6413DQ
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
V
A
1

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SI6413DQ Summary of contents

Page 1

... 70_C stg Symbol sec R thJA Steady State Steady State R thJF Si6413DQ Vishay Siliconix FEATURES D TrenchFETr Power MOSFET APPLICATIONS D Load Switch D PA Switch D Charger Switch * Source Pins and 7 must be tied common. 10 secs Steady State -20 "8 - 8.8 -7.2 -7.0 -5.7 -30 -1 ...

Page 2

... Si6413DQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72084 S-22384—Rev. A, 30-Dec-02 New Product 8000 6400 4800 2.5 V 3200 GS 1600 25_C J 0.8 1.0 1.2 Si6413DQ Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.4 1.2 1.0 0.8 ...

Page 4

... Si6413DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 400 mA D 0.0 -0.2 -0.4 -50 - Temperature (_C Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 Safe Operating Area, Junction-to-Case ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72084 S-22384—Rev. A, 30-Dec-02 New Product - Square Wave Pulse Duration (sec) Si6413DQ Vishay Siliconix 1 10 www.vishay.com 5 ...

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