ZXMN2088DE6 Diodes, Inc., ZXMN2088DE6 Datasheet

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ZXMN2088DE6

Manufacturer Part Number
ZXMN2088DE6
Description
20v Dual Sot23-6 N-channel Enhancement Mode Mosfet With Low Gate Drive Capability
Manufacturer
Diodes, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN2088DE6TA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
ZXMN2088DE6
20V Dual SOT23-6 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
Description
This new generation dual n-channel trench MOSFET from Zetex features low on-resistance
achievable with low gate drive.
Features
Applications
Ordering information
Device
ZXMN2088DE6TA
Device marking
2088
Issue 2 - June 2008
© Diodes Incorporated 2008
Low on-resistance
Low gate drive capability
SOT23-6 (dual) package
Power Management functions
Disconnect switches
Relay driving and load switching
V
(BR)DSS
20
0.200 @ V
0.240 @ V
0.310 @ V
R
Reel size
(inches)
DS
(on)
7
GS
GS
GS
= 4.5V
= 2.5V
= 1.8V
(Ω)
Tape width
(mm)
8
I
D
2.1
1.9
1.7
1
(A)
Quantity
per reel
3,000
G1
S2
G2
Pinout – top view
www.diodes.com
www.zetex.com
Part no.
D1
S1
D2

Related parts for ZXMN2088DE6

ZXMN2088DE6 Summary of contents

Page 1

... Low gate drive capability • SOT23-6 (dual) package Applications • Power Management functions • Disconnect switches • Relay driving and load switching Ordering information Device Reel size (inches) ZXMN2088DE6TA 7 Device marking 2088 Issue 2 - June 2008 © Diodes Incorporated 2008 I (A) (Ω) D 2.1 = 4.5V 1.9 = 2.5V 1 ...

Page 2

... For device with one active die (e) For device with two active die running at equal power. Issue 2 – June 2008 © Diodes Incorporated 2008 (b) (d) = 4.5V; T =25°C A (b) (d) = 4.5V; T =70°C A (a) (d) = 4.5V; T =25° ZXMN2088DE6 Symbol Limit Unit DSS ± 2 1.7 1 ...

Page 3

... Die Active (a)(d) 10 D=0.1 D=0. 100 1k 100µ 1m Pulse Power Dissipation 3 ZXMN2088DE6 2 Die Active (a)( 100 120 140 160 Temperature (°C) Derating Curve Single Pulse T =25°C amb 1 Die Active (a)(d) 10m 100m 1 10 100 1k Pulse Width (s) www.zetex.com www.diodes.com ...

Page 4

... C 52 oss C 29 rss t 2 d(on 12.7 d(off ZXMN2088DE6 Unit Conditions 250μ 100 3V μ 20V 100 nA V =±8V 250μ Ω 4.5V 1.0A ...

Page 5

... V GS 0.01 10 0.1 V 1.6 1.4 1.2 1.0 0.8 0 25°C 0.4 0.2 0.8 1.0 1.2 -50 Tj Junction Temperature (°C) Normalised Curves v Temperature 10 1. 2.5V 3V 0.1 3.5V 4.5V 10V 0.01 0 Source-Drain Diode Forward Voltage 5 ZXMN2088DE6 4.5V 10V 2. Drain-Source Voltage (V) DS Output Characteristics DS(on) V GS(th 250uA 100 150 T = 150° 25° ...

Page 6

... V - Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test Circuits Issue 2 – June 2008 © Diodes Incorporated 2008 ISS f = 1MHz OSS C RSS Gate-Source Voltage v Gate Charge 6 ZXMN2088DE6 V = 10V Charge (nC) www.zetex.com www.diodes.com ...

Page 7

... Packaging details – SOT236 Issue 2 – June 2008 © Diodes Incorporated 2008 ZXMN2088DE6 7 www.zetex.com www.diodes.com ...

Page 8

... Telephone: (1) 631 360 2222 Fax: (49 Fax: (1) 631 360 8222 europe.sales@zetex.com usa.sales@zetex.com Issue 2 – June 2008 © Diodes Incorporated 2008 ZXMN2088DE6 Asia Pacific Corporate Headquarters Diodes Zetex (Asia) Limited Diodes Incorporated 3701-04 Metroplaza Tower 1 15660 N. Dallas Parkway Hing Fong Road, Kwai Fong ...

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