FLX257XV ETC-unknow, FLX257XV Datasheet

FLX257XV

Manufacturer Part Number

FLX257XV

Description

Gaas Hemt Chips

Manufacturer

ETC-unknow

Datasheet

1.FLX257XV.pdf (4 pages)

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Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FLX257XV

Manufacturer:

RFMD

Quantity:

5 000

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ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

Edition 1.4

October 2004

FEATURES

• High Output Power: P 1dB = 33.5dBm(Typ.)

• High Gain: G 1dB = 7.5dB(Typ.)

• High PAE: η add = 31%(Typ.)

• Proven Reliability

Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)

DESCRIPTION

The FLX257XV chip is a power GaAs FET that is

designed for general purpose applications in the X-Band

frequency range as it provides superior power, gain, and

efficiency.

Eudyna’s stringent Quality Assurance Program assures the

highest reliability and consistent performance.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB

Gain Compression Point

Power Gain at 1dB

Gain Compression Point

Power-added Efficiency

Thermal Resistance

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.

gate resistance of 200Ω.

Item

Symbol

V GSO

G 1dB

I DSS

P 1dB

η add

Symbol

g m

R th

V p

V GS

V DS

T stg

P tot

T ch

Channel to Case

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 600mA

V DS = 5V, I DS = 50mA

I GS = -50µA

V DS = 10V

I DS ≈ 0.6I DSS

f = 10GHz

Test Conditions

T c = 25°C

Condition

Drain

GaAs FET & HEMT Chips

Min.

32.5

-1.0

6.5

-5

Gate

-65 to +175

Drain

Rating

1000

15.0

175

Limit

33.5

Typ.

600

-2.0

7.5

-5

Gate

FLX257XV

Drain

1500

Max.

-3.5

Gate

Drain

°C/W

Unit

dBm

Unit

°C

(Unit: µm)

Related parts for FLX257XV

FLX257XV Summary of contents

Page 1

... High Gain: G 1dB = 7.5dB(Typ.) • High PAE: η add = 31%(Typ.) • Proven Reliability DESCRIPTION The FLX257XV chip is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLX257XV GaAs FET & HEMT Chips POWER DERATING CURVE 100 150 Case Temperature (°C) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 1000 750 500 250 200 OUTPUT POWER vs. INPUT POWER V DS =10V I DS ≈0.6I DSS 10GHz out 29 27 η add ...

Page 3

... FLX257XV S22 MAG ANG .390 -171.2 .516 -168.2 .552 -170.1 .579 -169.1 .607 -167.1 .638 -165.5 .671 -164.6 .704 -164.2 .735 -164.2 .763 -164.5 .789 -165.0 .811 -165.7 ...

Page 4

... FLX257XV GaAs FET & HEMT Chips Drain Gate 60 For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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