IRHSNA57Z60 International Rectifier Corp., IRHSNA57Z60 Datasheet - Page 3

• Manufacturer Part Number: IRHSNA57Z60
• Description: Rad-hard Synchronous Rectifier Surface Mount Smd-2 30v N-channel
• Manufacturer: International Rectifier Corp.

Table 2. Single Event Effect Safe Operating Area
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-
tions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
1. Part numbers IRHSNA57Z60, IRHSNA53Z60 and IRHSNA54Z60
2. Part number IRHSNA58Z60
www.irf.com
Radiation Characteristics
BV
V
I
I
I
R
R
V
GSS
GSS
DSS
Ion
Br
I
Au
GS(th)
SD
DS(on)
DS(on)
DSS
MeV/(mg/cm
Drain-to-Source Breakdown Voltage
LET
37.9
59.4
80.3
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
Parameter
2
))
Energy
(MeV)
255
290
313
Fig a. Single Event Effect, Safe Operating Area
35
30
25
20
15
10
5
0
Range
0
(µm)
33.4
28.8
26.5
@V
-5
Up to 600K Rads(Si)
22.5
GS
30
25
Min
=0V @V
2.0
30
—
—
—
—
—
—
VGS
-10
Max
-100
100
3.5
GS
4.0
4.0
1.3
10
22.5
—
30
25
=-5V @V
1
1000K Rads (Si)
-15
Min
1.5
—
—
—
—
—
—
30
V
GS
DS
15
=-10V @V
30
20
-100
(V)
5.0
100
4.0
—
-20
Max
1.3
4.0
25
2
Units
m
µA
m
V
V
nA
GS
Br
I
AU
10
=-15V @V
25
15
V
V
GS
GS
Test Conditions
V
V
V
V
DS
GS
GS
GS
= V
V
V
= 0V, I
IRHSNA57Z60
= 24V, V
GS
GS
= 12V, I
= 0V, I S = 45A
= 12V, I
GS
DS
= -20 V
= 20V
—
=-20V
, I
D
20
10
D
= 1.0mA
GS
= 1.0mA
D
D
=45A
=45A
=0V
3