UMZ1N ON Semiconductor, UMZ1N Datasheet - Page 3

• Manufacturer Part Number: UMZ1N
• Description: Complementary Dual General Purpose Transistors
• Manufacturer: ON Semiconductor

−200
−160
−120
1000
−0.1
−80
−40
100
−10
10
−1
0
−1
−1
0
V
CE
Figure 1. Collector Saturation Region
V
−2.0 mA
CE
−1
= −6.0 V
, COLLECTOR−EMITTER VOLTAGE (V)
I
I
Figure 5. V
C
C
Figure 3. DC Current Gain
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
−10
−10
−2
25°C
BE(sat)
−1.5 mA
Typical Electrical Characteristics: PNP Transistor
−3
−25°C
T
versus I
A
= 100°C
−100
−100
−1.0 mA
−4
I
−0.5 mA
B
C
T
I
T
C
= −0.2 mA
A
A
/I
= 25°C
B
= 25°C
−5
= 10
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−1000
−1000
UMZ1NT1
−6
3
−10,000
−1000
−0.01
1000
−100
−0.1
−0.1
100
−10
10
−1
−1
−1
−1
0 −0.1
COMMON EMITTER
V
CE
V
I
CE
C
= 6 V
/I
B
= −1.0 V
−0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1
= 10
Figure 6. Base−Emitter Voltage
V
I
I
BE
Figure 4. V
C
C
Figure 2. DC Current Gain
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, BASE−EMITTER VOLTAGE (V)
25°C
−10
−10
25°C
CE(sat)
T
−25°C
T
A
A
T
= 100°C
= 100°C
A
versus I
= 100°C
−100
−100
−25°C
C
25°C
−25°C
−1000
−1000