MM3Z5518 Microsemi Corporation, MM3Z5518 Datasheet
MM3Z5518
Manufacturer Part Number
MM3Z5518
Description
Low Voltage Avalanche Diode
Manufacturer
Microsemi Corporation
Datasheet
1.MM3Z5518.pdf
(2 pages)
Copyright
MSCXXXX.PDF 02-12-2001 REV A
MM3Z5518
MM3Z5519
MM3Z5520
MM3Z5521
MM3Z5522
MM3Z5523
MM3Z5524
MM3Z5525
MM3Z5526
MM3Z5527
MM3Z5528
MM3Z5529
MM3Z5530
MM3Z5531
MM3Z5532
MM3Z5533
MM3Z5534
MM3Z5535
MM3Z5536
MM3Z5537
MM3Z5538
MM3Z5539
MM3Z5540
MM3Z5541
MM3Z5542
MM3Z5543
MM3Z5544
MM3Z5546
MM3Z545
NUMBER
(NOTE 1)
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C
Unless otherwise specified
PART
LOW ZENER NOISE SPECIFIED
LOW ZENER IMPEDANCE
LOW LEAKAGE CURRENT
SOD323 PACKAGE
OPERATING TEMPERATURE: -55°C TO +150°C
STORAGE TEMPERATURE: -55°C TO +150°C
POWER: 200mW
1
2
3
4
5
6
MARKING
DEVICE
2001
VOLTAGE
NOMINAL
(NOTE 2)
V
ZENER
VOLTS
Z
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
TOLERANCE AND VOLTAGE DESIGNATION: The type part numbers shown are +/- 20 % with guaranteed limits for only V
V
are indicated by a B suffix for +/ - 5.0% units. C suffix for +/- 2.0% and D suffix for +/- 1.0%.
ZENER (V
ambient temperature of 25°C at the specified current of I
ZENER IMPEDANCE (Z
having an rms value equal to 10% of the dc zener current (I
REVERSE LEAKAGE CURRENT (I
Reverse leakage current is guaranteed and measured at V
MAXIMUM REGULATOR CURRENT (I
therefore, it applies only to the B C, or D suffix devices. The actual I
divided by the actual V
MAXIMUM REGULATION FACTOR (? V
junction in thermal equilibrium.
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
@ I
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
F
Z T
. Units with A suffix are +/- 10% with guaranteed limits for only V
M A X I M U M R A T I N G S
CURRENT
TEST
mAdc
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
I
20
20
20
20
10
ZT
S C O T T S D A L E D I V I S I O N
Z
) VOLTAGE MEASUREMENT: Nominal zener voltage is measured with the device junction in thermal equilibrium with
B-C D SUFFIX
IMPEDANCE
MAX ZENER
(NOTE 3)
F E A T U R E S
Z
OHMS
ZT
100
100
100
100
100
100
100
100
100
100
100
100
100
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
90
@ I
ZT
(NOTE 4) NON & A
MAX. REVERSE LEAKAGE
µAdc
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.0
Z
I
1
R
of the device.
Z
) DERIVATION: The zener impedance is derived from the 60 Hz voltage, which results when an ac current
CURRENT
SUFFIX
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
0.9
0.9
0.9
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
V
R
- VOLTS
SUFFIX
B C D
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
R
):
DC ZENEER
CURRENT
MAXIMUM
(NOTE 5)
ZM
SUFFIX
B C D
mAdc
57.5
52.5
49.0
43.0
40.5
37.5
34.0
30.5
28.0
25.5
23.0
21.0
19.0
17.5
16.0
14.5
13.5
12.5
12.0
11.0
10.5
10.0
Z
I
9.5
8.5
8.0
7.5
7.0
6.5
6.0
Z M
): The maximum current shown is based on the maximum voltage of a 5.0% type unit;
): ? V
Scottsdale Division
Microsemi
(MICRO-VOLTS
ROOT CYCLE)
B C D SUFFIX
PER SQUARE
AT I
MAX. NOISE
Z
DENSITY
Z
is the maximum difference between Vz at I
=250 µA
0.5
1.0
2.0
4.0
4.0
4.0
5.0
N
0.5
0.5
0.5
0.5
0.5
1.0
1.0
10
15
20
20
20
20
20
20
20
20
20
20
20
20
20
D
N O T E S
REGULATION
(NOTE 6)
FACTOR
ZT
VOLTS
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.10
0.20
0.45
0.50
?V
0.05
0.05
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.30
0.35
0.40
.
R
Z
ZT
as shown on the table.
LOW VOLTAGE AVALANCHE DIODE
) is superimposed on I
CURRENT
mAdc
LOW
0.25
0.25
0.01
0.01
0.01
0.01
0.0 1
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
2.0
2.0
2.0
2.0
1.0
V
I
ZL
Z
Z
, I
ZM
R
for any devices may not exceed the value of 200 milliwatts
and V
PRODUCT PREVIEW
F
. Units with guaranteed limits for all six parameters
ZT
P A C K A G E D I M E N S I O N S
.
MM3Z5518 thru MM3Z5546
S O D 3 2 3 P A C K A G E
ZT
and V
DIM
A
B
C
D
E
F
G
H
Z
at I
.010
.003
.063
.045
.094
MIN
INCHES
--
--
--
ZL
MAX
measured with the device
.043
.004
.006
.016
.006
.075
.057
.106
MILLIMETERS
1.600
1.143
2.388
MIN
.254
.076
--
--
--
1.092
1.905
1.448
2.692
MAX
.102
.152
.406
.152
Z
, I
Page 1
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MM3Z5518 Summary of contents
Page 1
... the maximum difference between Microsemi Scottsdale Division MM3Z5518 thru MM3Z5546 PRODUCT PREVIEW INCHES MILLIMETERS DIM MIN ...
Page 2
... CAPACITANCE VS. ZENER VOLTAGE V Z REVERSE VOLTAGE Z (VOLTS (VOLTS REVERSE CHARACTERISTIC I ZM AND SYMBOL IDENTIFICATION Microsemi Scottsdale Division MM3Z5518 thru MM3Z5546 PRODUCT PREVIEW 100 120 140 160 180 200 220 Zener Voltage (TYPICAL) Page 2 ...