VI40100G Vishay, VI40100G Datasheet - Page 2

• Manufacturer Part Number: VI40100G
• Description: Dual High-voltage Trench Mos Barrier Schottky Rectifier
• Manufacturer: Vishay

V40100G, VF40100G, VB40100G & VI40100G
Vishay General Semiconductor
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: 10 ms pulse width
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Breakdown Voltage
Instantaneous forward voltage
per diode
Reverse current per diode
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
A
= 25 °C unless otherwise noted)
Figure 1. Maximum Forward Current Derating Curve
50
40
30
20
10
0
0
(1)
Resistive or Inductive Load
25
VF40100G
50
Case Temperature (°C)
V40100G-E3/4W
VF40100G-E3/4W
VB40100G-E3/4W
VB40100G-E3/8W
VI40100G-E3/4W
(2)
PREFERRED P/N
75
100
VB(I)40100G
125
at I
at I
at I
at V
at V
150
I
I
I
I
R
F
F
F
F
F
F
R
R
TEST CONDITIONS
= 5 A
= 10 A
= 20 A
= 5 A
= 10 A
= 20 A
= 1.0
= 70 V
= 100 V
A
UNIT WEIGHT (g)
= 25 °C unless otherwise noted)
SYMBOL
175
A
R
= 25 °C unless otherwise noted)
θJC
1.88
1.75
1.39
1.39
1.46
T
T
T
T
T
T
T
A
A
A
A
A
A
A
= 25 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
V40100G
2.0
PACKAGE CODE
SYMBOL
V
18
16
14
12
10
V
I
VF40100G
BR
4W
4W
4W
8W
4W
8
6
4
2
0
R
F
Figure 2. Forward Power Loss Characteristics
0
5.0
D = 0.1
D = 0.2
100 (minimum)
5
D = 0.3
BASE QUANTITY
TYP.
VB40100G
0.49
0.59
0.75
0.42
0.54
0.67
12
55
21
8
2.0
10
800/reel
50/tube
50/tube
50/tube
50/tube
D = 0.5
D = 0.8
15
VI40100G
MAX.
D = t
Document Number: 88970
0.81
0.73
500
35
-
-
-
-
-
-
-
2.0
p
/T
DELIVERY MODE
20
Revision: 19-Oct-07
Tape and reel
D = 1.0
T
t
p
Tube
Tube
Tube
Tube
25
UNIT
UNIT
°C/W
mA
mA
µA
µA
V