V80100P Vishay, V80100P Datasheet - Page 2

• Manufacturer Part Number: V80100P
• Description: Dual High-voltage Trench Mos Barrier Schottky Rectifier
• Manufacturer: Vishay

V80100P
Vishay General Semiconductor
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
Reverse current per diode
ELECTRICAL CHARACTERISTICS (T
PARAMETER
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance per diode
ORDERING INFORMATION
PREFERRED P/N
V80100P-E3/45
A
= 25 °C unless otherwise noted)
80
60
50
40
20
0
0
Figure 1. Forward Current Derating Curve
Resistive or Inductive Load
25
50
Case Temperature (°C)
UNIT WEIGHT (g)
(1)
75
6.14
100
125
at V
at V
150
R
R
PREFERRED PACKAGE CODE
TEST CONDITIONS
= 80 V
= 100 V
A
= 25 °C unless otherwise noted)
175
A
= 25 °C unless otherwise noted)
T
T
T
T
J
J
J
J
= 25 °C
= 125 °C
= 25 °C
= 125 °C
45
Figure 2. Forward Power Loss Characteristics Per Diode
SYMBOL
SYMBOL
35
30
25
20
15
10
R
5
0
θJC
I
0
R
BASE QUANTITY
D = 0.1
5
30/Tube
D = 0.2
10
Average Forward Current (A)
TYP.
15
38
10
85
20
D = 0.3
20
V80100P
D = 0.5
1.5
25
D = tp/T
30
DELIVERY MODE
D = 0.8
MAX.
Document Number 88979
800
45
-
-
35
Tube
T
D = 1.0
tp
40
45
22-Aug-06
UNIT
°C/W
UNIT
mA
mA
µA
µA