SMS1A EIC Semiconductor Incorporated, SMS1A Datasheet

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SMS1A

Manufacturer Part Number
SMS1A
Description
Super Fast Rectifier Diodes
Manufacturer
EIC Semiconductor Incorporated
Datasheet
Rating at 25
For capacitive load, derate current by 20%.
Notes :
Page 1 of 2
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
SMS1A - SMS1M
* Glass passivated junction chip
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Super fast recovery time
* Pb / RoHS Free
* Case: JEDEC SOD-123FL, molded plastic
* Terminals: Solder Plated, solderable per
* Polarity: Color band denotes cathode end
* Mounting position : Any
* Weight: 0.02 gram (Approximate)
Marking
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 55 °C
Maximum Peak Forward Surge Current
8.3 ms. Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
( 1 ) Reverse Recovery Test Conditions : I
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
over passivated chip
°
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
MIL-STD-750, Method 2026
RATING
F
= 1.0 A
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
SYMBOL SMS1A SMS1B SMS1D SMS1G SMS1J SMS1K SMS1M UNIT
V
V
I
T
I
V
F(AV)
Trr
FSM
V
C
T
RRM
RMS
I
STG
DC
DC
R
F
J
J
SA
50
35
50
SUPER FAST RECTIFIERS
0.95
100
100
SB
70
SURFACE MOUNT
200
140
200
TH97/10561QM
SD
5.0
Dimensions in millimeters
- 65 to + 150
- 65 to + 150
SOD-123FL
400
280
400
SG
30
35
50
1.7
TW00/17276EM
600
420
600
SJ
Rev. 00 : January 21, 2008
800
560
800
SK
4.0
10
1000
1000
SGS TH07/1033
700
SM
IATF 0060636
μA
ns
pF
°C
°C
V
V
V
A
A
V

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SMS1A Summary of contents

Page 1

... Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range Notes : ( 1 ) Reverse Recovery Test Conditions : Measured at 1.0 MHz and applied reverse voltage of 4.0 V Page SYMBOL SMS1A SMS1B SMS1D SMS1G SMS1J SMS1K SMS1M UNIT RRM V 35 RMS ...

Page 2

... RATING AND CHARACTERISTIC CURVES ( SMS1A - SMS1M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω Vdc (approx) NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.2 - DERATING CURVE CURRENT 1 ...

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