UF1001 EIC Semiconductor Incorporated, UF1001 Datasheet
UF1001
Manufacturer Part Number
UF1001
Description
Ultra Fast Rectifier Diodes
Manufacturer
EIC Semiconductor Incorporated
Datasheet
1.UF1001.pdf
(2 pages)
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Price
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Part Number:
UF1001
Manufacturer:
PANJIT
Quantity:
25 000
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Part Number:
UF1001CT
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PANJIT
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15 000
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Part Number:
UF1001F
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PANJIT
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15 000
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Part Number:
UF1001FCT
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PANJIT
Quantity:
15 000
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Page 1 of 2
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
PRV : 50 ~ 1000 Volts
Io : 1.0 Ampere
UF1001 ~ UF1007
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
Notes :
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time
Typical Junction Capacitance
Typical Thermal Resistance
Junction Temperature Range
Storage Temperature Range
( 1 ) Reverse Recovery Test Conditions : I
Method 208 guaranteed
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
( 3 ) Thermal Resistance from Junction to Ambient.
RATING
(3)
(2)
F
= 1.0 A
(1)
Ta = 55 C
Tj = 25 C
Tj = 100 C
F
= 0.5 A, I
SYMBOL UF1001 UF1002 UF1003 UF1004 UF1005 UF1006 UF1007 UNIT
V
V
R JA
I
T
I
I
V
F(AV)
FSM
R(H)
V
Trr
RRM
RMS
C
T
STG
I
DC
R
R
F
J
J
= 1.0 A, Irr = 0.25 A.
DC
50
35
50
100
100
70
1.1
50
20
Dimensions in inches and ( millimeters )
200
140
200
RECTIFIER DIODES
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
- 55 to + 150
- 55 to + 150
400
280
400
100
ULTRA FAST
1.0
30
25
5
DO - 41
600
420
600
Rev. 02 : March 25, 2005
1.00 (25.4)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
800
560
800
1.7
75
10
MIN.
MIN.
1000
1000
700
C/W
ns
pf
V
V
V
A
A
V
C
C
A
A
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UF1001 Summary of contents
Page 1
... Typical Thermal Resistance Junction Temperature Range Storage Temperature Range Notes : ( 1 ) Reverse Recovery Test Conditions : Measured at 1.0 MHz and applied reverse voltage of 4 Thermal Resistance from Junction to Ambient. Page SYMBOL UF1001 UF1002 UF1003 UF1004 UF1005 UF1006 UF1007 UNIT V 50 100 RRM ...
Page 2
... RATING AND CHARACTERISTIC CURVES ( UF1001 ~ UF1007 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM Vdc (approx.) NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1 ...