V20150SG Vishay, V20150SG Datasheet

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V20150SG

Manufacturer Part Number
V20150SG
Description
High-voltage Trench Mos Barrier Schottky Rectifier
Manufacturer
Vishay
Datasheet
Document Number: 89060
Revision: 07-Mar-08
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
PIN 1
PIN 3
NC
A
V
K
VB20150SG
F
V20150SG
TO-220AB
TO-263AB
at I
T
V
I
J
I
F(AV)
FSM
High-Voltage Trench MOS Barrier Schottky Rectifier
RRM
F
max.
= 20 A
NC
HEATSINK
K
CASE
PIN 2
A
1
2
TMBS
3
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
V20150SG, VF20150SG, VB20150SG & VI20150SG
A
®
= 25 °C unless otherwise noted)
K
PIN 1
PIN 3
PIN 1
PIN 3
VF20150SG
Ultra Low V
VI20150SG
ITO-220AB
150 °C
TO-262AA
0.77 V
150 V
140 A
20 A
SYMBOL
T
J
V
I
PIN 2
I
F(AV)
, T
V
PIN 2
FSM
RRM
K
AC
1
1
STG
2
2
3
3
F
= 0.57 V at I
V20150SG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
• Component in accordance to RoHS 2002/95/EC
peak of 245 °C (for TO-263AB package)
and TO-262AA package)
and WEEE 2002/96/EC
VF20150SG
F
TO-220AB,
= 5 A
Vishay General Semiconductor
- 55 to + 150
1500
150
140
20
VB20150SG
ITO-220AB,
VI20150SG
TO-263AB
www.vishay.com
UNIT
°C
V
A
A
V
and
1

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V20150SG Summary of contents

Page 1

... V20150SG, VF20150SG, VB20150SG & VI20150SG High-Voltage Trench MOS Barrier Schottky Rectifier ® TMBS TO-220AB V20150SG PIN 1 PIN 2 CASE PIN 3 TO-263AB VB20150SG HEATSINK PRIMARY CHARACTERISTICS I F(AV) V RRM I FSM max. J MAXIMUM RATINGS ( °C unless otherwise noted) ...

Page 2

... V20150SG, VF20150SG, VB20150SG & VI20150SG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Breakdown voltage (1) Instantaneous forward voltage (2) Reverse current Notes: (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test pulse width THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance ORDERING INFORMATION (Example) ...

Page 3

... V20150SG, VF20150SG, VB20150SG & VI20150SG 100 T = 150 ° 125 ° 100 ° °C A 0.1 0 0.2 0.4 0.6 0.8 1.0 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics 100 150 ° 125 ° 100 °C 0 °C 0.001 A 0.0001 10 20 ...

Page 4

... V20150SG, VF20150SG, VB20150SG & VI20150SG Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1.148 (29.16) 0.140 (3.56) 1.118 (28.40) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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