NSDEMN11DXV6T1 ON Semiconductor, NSDEMN11DXV6T1 Datasheet

NSDEMN11DXV6T1

Manufacturer Part Number

NSDEMN11DXV6T1

Description

Common Cathode Quad Array Switching Diode

Manufacturer

ON Semiconductor

Datasheet

1.NSDEMN11DXV6T1.pdf (4 pages)

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NSDEMN11XV6T1,

NSDEMN11XV6T5

Common Cathode Quad

Array Switching Diode

use in ultra high speed switching applications. This device is housed in

the SOT−563 package which is designed for low power surface mount

applications, where board space is at a premium.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. t = 1 mS

2. FR−4 @ Minimum Pad

May, 2006 − Rev. 2

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Total Device Dissipation @T

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Total Device Dissipation @T

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Junction and Storage Temperature

Reverse Voltage

Peak Reverse Voltage

Forward Current

Peak Forward Current

Peak Forward Surge Current

This Common Cathode Epitaxial Planar Quad Diode is designed for

Fast t

Low C

Pb−Free Packages are Available

(Both Junctions Heated)

(One Junction Heated)

Characteristic

Rating

= 25°C)

= 25°C

Symbol

(Note 1)

Symbol

FSM

, T

qJA

stg

−55 to +150

(Note 2)

Value

Max

100

300

357

350

500

250

2.0

2.9

4.0

mW/°C

mAdc

°C/W

Unit

Vdc

Adc

°C

†For information on tape and reel specifications,

NSDEMN11XV6T1

NSDEMN11XV6T1G SOT−563

NSDEMN11XV6T5

NSDEMN11XV6T5G SOT−563

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

Device

ORDERING INFORMATION

(4)

(3)

N9 = Specific Device Code

MARKING DIAGRAM

http://onsemi.com

= Date Code

= Pb−Free Package

CASE 463A

SOT−563

PLASTIC

(Pb−Free)

SOT−563 4000/Tape & Reel

SOT−563 8000/Tape & Reel

(5)

Package

N9 M G

Publication Order Number:

(2)

NSDEMN11XV6T1/D

4000/Tape & Reel

8000/Tape & Reel

Shipping

(1)

(6)

†

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NSDEMN11DXV6T1 Summary of contents

Page 1

NSDEMN11XV6T1, NSDEMN11XV6T5 Common Cathode Quad Array Switching Diode This Common Cathode Epitaxial Planar Quad Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−563 package which is designed for low power surface ...

Page 2

NSDEMN11XV6T1, NSDEMN11XV6T5 ELECTRICAL CHARACTERISTICS Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time 3. t Test Circuit on following page. rr TYPICAL ELECTRICAL CHARACTERISTICS 100 T = 85° 1 0.1 ...

Page 3

NSDEMN11XV6T1, NSDEMN11XV6T5 A RECOVERY TIME EQUIVALENT TEST CIRCUIT Figure 4. Reverse Recovery Time Test Circuit for the NSDEMN11XV6T1 INPUT PULSE ...

Page 4

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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