UF28100M Tyco Electronics, UF28100M Datasheet

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UF28100M

Manufacturer Part Number
UF28100M
Description
Rf Mosfet Power Transistor, Loow, 28v 100 - 500 Mhz
Manufacturer
Tyco Electronics
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UF28100M
Manufacturer:
M/A-COM
Quantity:
5 000
Part Number:
UF28100M
Manufacturer:
MA/COM
Quantity:
20 000
* Per Side
I Parameter
Electrical Characteristics
pi
Absolute Maximum Ratings at 25°C
Load Mismatch Tolerance
Power Gain
Drain Efficiency
Return Loss
Features
Output Capacitance
Reverse Capacitance
Gate-Source
Gate Threshold Voltage
ForwardTransconductance
input Capacitance
RF MOSFET
100 - 500 MHz
Drain-Source
Drain-Source LeakageCurrent
Thermal Resistance
JunctionTemperature
Storage Temperature
Power Dissipation
Lower Noise Figure Than Competitive
N-Channel Enhancement
DMOS Structure
High Saturated Output Power
Lower Capacitances
Specifications Subject to Change Without Notice.
an AMP
Leakage Current
Breakdown Voltage
company
for Broadband
T STG
El JO
PD
T,
Mode Device
Power Transistor,
at 25°C
( Symbol
VSWR-T
V
BVDSS
-55 to +150
C OS.5
C RSS
C ISS
GSCTHI
‘OS5
‘GSS
GM
%
Operation
200
250
0.7
Devices
1 Min
2.0
50
10
1.5
10
65
-
“Ciw
“C
“C
1 Max
W
3O:l
135
3.0
6.0
3.0
90
24
-
-
-
-
-
1 Units 1
dB
dB
mA
pF
pF
pF
pA
%
V
S
-
V
I
V,,=28.0
v,,=%.O
V,,=28.0
v,,=28.0
V,s=28.0
v,,=2a.ov,
v,,=2a.o
V,,=lO.O
V,,=lO.O
v,=2a.o
V,,=O.O V, I,,=150
v,,=20
--
v, v,,=o.o
V, 1,,=600.0
V, 1,,=600.0
V. 1,,=600.0
v, F=l .o MHz’
V, F=l .O MHz’
V, 1,,=600.0
v. vo,=o.o v
V, 1,,=300.0 mA‘
V, 1,,=3000.0
lOOW, 28V
F=I
P
I4
II
.OMHZ*
V’
mA’
&w
505
m
mA, PO,,=1 00.0 W, F=500 MHz
mA, P,,,.=100.0
mA, P,,=lOO.O
mA, P,,=lOO.O
mA,
Test Conditions
~v,,=l .O
t.74
a&b,
V, 80 ps Pulse’
W. F=500 MHz
W, F=500 MHz
W, F=500 MHz
.m4
ooc
am
UF281 OOM
1
1
1
M/A-COM,
a?4
ace
ale
inc.
I
1

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UF28100M Summary of contents

Page 1

AMP company RF MOSFET Power Transistor, 100 - 500 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband High Saturated Output Power Lower Noise Figure Than Competitive Absolute Maximum Ratings at 25°C pi Power Dissipation PD ...

Page 2

RF MOSFET Power Transistor, Typical Broadband Performance EFFICIENCY vs FREQUENCY mA P,=lO W I,,=600 (Push-Pull 80. 100 200 300 FREQUENCY (MHz Specifications Subject to Change Without Notice. M/A-COM, Inc. 28V IOOW, ...

Page 3

... OHM SEMI-RIGIG COAX l3 ‘370 X 25’ LONG 74 1:l BALUN TRAMFORMER. 50 OHM SEMI-RIGID COAX ‘.oBs x 4. LONG 01 uF2s1ooM BOARD ROGERS 5870. .m?’ THICK JlJ2 CONNECIOR. TYPE ‘N J3.JdJ5 BANANAJACK HEATSMK FINNED ALUMINUM. DiN 73XD1B2-03 UF28100M Z,,,D (OHMS) 14.5+jO.5 1 7.5+j 1.0 3 3.5 Watts M/A-COM, v2. Inc. ...

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