UF2820P Tyco Electronics, UF2820P Datasheet
UF2820P
Manufacturer Part Number
UF2820P
Description
Rf Mosfet Power Transistor, 2ow, 28v 100 - 500 Mhz
Manufacturer
Tyco Electronics
Datasheet
1.UF2820P.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UF2820P
Manufacturer:
M/A-COM
Quantity:
5 000
Part Number:
UF2820P
Manufacturer:
MA/COM
Quantity:
20 000
MIA-COM,
* Per Side
1 Thermal Resistance
Electrical Characteristics
I StorageTemperature
1 Gate-Source Voltage
_ Input Capacitance
Absolute Maximum Ratings at 25°C
l
l
l
l
Load Mismatch Tolerance
l
Output Capacitance
Power Gain
Drain Efficiency
Features
GateThreshold Voltage
Forward Transconductance
Reverse Capacitance
RF MOSFET
100 - 500 MHz
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Parameter
Junction Temperature
Drain-Source Current
Power Dissipation
Parameter
Drain-Source Voltage
Lower Noise Floor
Lower Capacitances
Common Source Configuration
N-Channel Enhancement
DMOS Structure
inc.
Specifications
for Broadband
I
I
Subject to Change Without Notice.
Symbol
TSTG
V 05
VGS
T,
Mode Device
I DS
PD
Power Transistor,
at 25°C
I
1 -55to+150
I
VSWR-T
Symbol
V
BV,,,
C ass
C RSS
C ES
‘ass
GWHI
G.
qD
‘DSS
GM
Rating
/
Operation
2.8
200
53
65
20
I
.160
Min
2.0
10
50
65
-
I
I
Units
I
1 2O:l 1
,
1
“C
“C
W
A
V
v
Max
4.8
2.0
2.0
6.0
14
10
-
-
-
-
(
I
I
I
1
Units
dB
mA
pA
pF
pF
pF
%
V
S
-
V
1
( V,,=28.0 V, 1,,=200.0 mA, P,,p20.0
,
V&O.0
V,,=28.0 V, F=l .O MHz’
‘.‘,,=28.0 V, F=l .O MHz’
V,,=28.0 V, F=l .O MHz’
V,,=28.0 V, 1,,=200.0 mA. P -.._ =20.0 W. F=500 MHz
V,D=28.0 V, 1,,=200.0 mA, P,U,=20.0 W, F=500 MHz
V,,=28.0 V, V,,=O.O V’
V&20
V&O.0
V,,=O.O V, 1,,=4.0 mA‘
--
v, v,,=o.o V’
V, 1,,=200.0 mA’
V, 1,,=200.0 mA,
2OW, 28V
--
-~
lest Conditions
AV,,=l .O
“VI
V, 80 us Pulse’
W, FSOO MHz
UF2820P
v2.00
1
I
I
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UF2820P Summary of contents
Page 1
... V, F=l .O MHz’ V,,=28.0 V, F=l .O MHz’ C RSS 4 V,,=28.0 V, 1,,=200.0 mA. P -.._ =20.0 W. F=500 MHz V,D=28.0 V, 1,,=200.0 mA, P,U,=20.0 W, F=500 MHz 2O V,,=28.0 V, 1,,=200.0 mA, P,,p20.0 - UF2820P lest Conditions AV,,= Pulse’ “VI W, FSOO MHz v2. ...
Page 2
RF MOSFET Power Transistor, 2OW, 28V Typical Broadband Performance CAPACITANCES vs VOLTAGE F=l.OMHz GAIN vs FREQUENCY V,,=28 V P,,p20 W I,,=200 mA 300 100 200 FREQUENCY (MHz 0.05 Specifications Subject to Change Without ...
Page 3
RF MOSFET Power Transistor, 2OW, 28V Typical Device Impedance Frequency (MHz) 100 300 500 I Z,, is the series equivalent input impedance Z LoAD‘ is the optimum series equivalent RF Test Fixture Specifications Sub!ect to Change Without Notice. M/A-COM, Inc. ...