SUF-6000 Sirenza Microdevices, SUF-6000 Datasheet - Page 4

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SUF-6000

Manufacturer Part Number
SUF-6000
Description
2-16 Ghz Broadband Phemt Amplifier
Manufacturer
Sirenza Microdevices
Datasheet
Pad Description
Device Assembly
303 S. Technology Ct.
Broomfield, CO 80021
Bottom
DC Block
Pad #
Die
1
2
RF
Function
OUT
GND
RF
/ Bias
IN
50 Ω Line
1
This pad is DC coupled and matched to 50 Ohms.
An external DC block is required.
This pad is DC coupled and matched to 50 Ohms.
Bias is applied through this pad.
Die bottom must be connected to RF/DC ground
using silver-filled conductive epoxy.
Interconnect
Wire or Ribbon
Description
Phone: (800) SMI-MMIC
4
SUF-6000 2-16 GHz Broadband pHEMT Amplifier
3-5 mil gap
Notes:
1. All Dimensions in Inches [Millimeters].
2. No connection required for unlabeled bond pads.
3. Die Thickness is 0.004 (0.100).
4. Typical bond pad is 0.004 (0.100) square.
5. Backside metalization: Gold.
6. Backside is Ground.
7. Bond pad metalization: Gold.
2
50 Ω Line
Choke
Advanced Information
DC Block
http://www.sirenza.com
Bypass Cap(s)
EDS-105420 Rev A
+5V

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