FGA70N30TD ETC-unknow, FGA70N30TD Datasheet - Page 5

• Manufacturer Part Number: FGA70N30TD
• Description: 300v, 70a Pdp Igbt
• Manufacturer: ETC-unknow

FGA70N30TD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate Charge Characteristics
Figure 11. Turn-on Characteristics vs.
100
300
20
16
12
15
12
10
8
4
0
9
6
3
0
4
0
0
Common Emitter
T
I
C
C
t
r
t
= 25
d(on)
= 20A
Gate Resistance
o
C
30
20
Gate-Emitter Voltage, V
8
Gate Resistance, R
Gate Charge, Q
40A
70A
60
40
12
100V
Common Emitter
V
I
T
T
C
90
CC
C
C
60
= 40A
g
= 25
= 125
[nC]
= 200V, V
Common Emitter
T
G
C
[ Ω ]
o
GE
V
= 125
C
o
cc
C
16
[V]
= 200V
120
GE
80
o
GE
C
= 15V
150
100
20
(Continued)
5
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
Figure 12. Turn-off Characteristics vs.
1000
3000
6000
5000
4000
3000
2000
1000
100
0.01
10
100
0.1
10
0
1
0
1
0.1
t
t
d(off)
f
I
C
I
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
C
MAX (Continuous)
Gate Resistance
MAX (Pulsed)
Collector-Emitter Voltage, V
Collector - Emitter Voltage, V
20
C
Gate Resistance, R
= 25
1
C
C
C
o
rss
iss
oss
C
40
10
Common Emitter
V
I
T
T
C
60
C
C
CC
= 40A
Common Emitter
V
T
DC Operation
= 25
= 125
G
C
GE
= 200V, V
10
[ Ω ]
= 25
= 0V, f = 1MHz
CE
o
C
o
C
o
[V]
CE
C
80
100
10ms
100
[V]
GE
1ms
www.fairchildsemi.com
= 15V
µ
s
50
µ
s
100
30
500