NGD18N40CLB ON Semiconductor, NGD18N40CLB Datasheet

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NGD18N40CLB

Manufacturer Part Number
NGD18N40CLB
Description
Ignition Igbt 18 Amps, 400 Volts
Manufacturer
ON Semiconductor
Datasheet
1.NGD18N40CLB.pdf (8 pages)

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Quantity
Price
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Part Number:
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NGD18N40CLB
Ignition IGBT
18 Amps, 400 Volts
N−Channel DPAK
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
•
•
•
•
•
•
•
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 7
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
ESD (Human Body Model)
ESD (Machine Model) R = 0 Ω, C = 200 pF
Total Power Dissipation @ T
Operating and Storage Temperature Range
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
Stress Applied to Load
Per Area
Microprocessor Devices
Ideal for Coil−on−Plug Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Low Threshold Voltage Interfaces Power Loads to Logic or
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
Emitter Ballasting for Short−Circuit Capability
Pb−Free Package is Available*
@ T
R = 1500 Ω, C = 100 pF
Derate above 25°C
C
= 25°C − Pulsed
Rating
(T
J
= 25°C unless otherwise noted)
C
G
= 25°C
) and Gate−Emitter Resistor (R
Symbol
T
V
V
ESD
ESD
J
V
P
, T
CES
CER
I
GE
C
D
stg
−55 to
Value
+175
0.77
430
430
800
115
8.0
18
15
50
1
GE
Watts
W/°C
)
Unit
V
V
V
A
A
kV
°C
V
DC
DC
DC
DC
AC
†For information on tape and reel specifications,
NGD18N40CLBT4
NGD18N40CLBT4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
G
Device
Collector
I
ORDERING INFORMATION
C
1 2
G18N40B = Device Code
Y
WW
G
2
V
= 10 A, V
Emitter
MARKING DIAGRAM
3
Gate
CE(on)
http://onsemi.com
1
3
400 VOLTS
R
18 AMPS
R
GE
G
YWW
G18
N40BG
(Pb−Free)
4
Package
= Year
= Work Week
= Pb−Free Device
DPAK
DPAK
3 2.0 V @
Publication Order Number:
GE
CASE 369C
STYLE 7
DPAK
. 4.5 V
NGD18N40CLB/D
2500/Tape & Reel
2500/Tape & Reel
Collector
C
E
Shipping
4
†

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NGD18N40CLB Summary of contents

Page 1

... CASE 369C 1 2 STYLE 7 3 MARKING DIAGRAM 1 Gate YWW 4 2 G18 Collector Collector N40BG 3 Emitter G18N40B = Device Code Y = Year WW = Work Week G = Pb−Free Device ORDERING INFORMATION † Package Shipping DPAK 2500/Tape & Reel DPAK 2500/Tape & Reel (Pb−Free) Publication Order Number: NGD18N40CLB/D ...

Page 2

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS Characteristic Single Pulse Collector−to−Emitter Avalanche Energy 5 21 1.8 mH, Starting 5.0 V, ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Threshold Temperature Coefficient (Negative) Collector−to−Emitter On−Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−On Delay Time Rise Time ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 25° COLLECTOR TO EMITTER VOLTAGE (VOLTS) CE Figure 1. Output Characteristics ...

Page 5

1 0 GATE TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage 2 ...

Page 6

100 ms 0.1 0. COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at T 100 ms 0.05 1 ...

Page 7

Duty Cycle = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 0.1 0.01 Single Pulse 0.001 0.0001 0.00001 0.0001 (Non−normalized Junction−to−Ambient mounted on P (pk DUTY CYCLE 0.001 0.01 t,TIME (S) Figure ...

Page 8

... U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGD18N40CLB/D ...

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