NGB8207AN ON Semiconductor, NGB8207AN Datasheet
NGB8207AN
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NGB8207AN Summary of contents
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... D PAK CASE 418B STYLE 4 1 MARKING DIAGRAM 4 Collector NGB 8207ANG AYWW 1 3 Gate Emitter 2 Collector NGB8207AN = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping 2 D PAK 800 / Tape & Reel (Pb−Free) Publication Order Number: NGB8207AN/D † ...
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UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS Characteristic Single Pulse Collector−to−Emitter Avalanche Energy 16 3.7 mH ...
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ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 4) Collector−to−Emitter On−Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn−On Delay Time (Resistive) Low Voltage Rise Time (Resistive) Low Voltage Turn−Off Delay Time (Resistive) Low Voltage Fall Time ...
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TYPICAL ELECTRICAL CHARACTERISTICS 25°C 10 150° (mH) Figure 1. Typical Self Clamped Inductive Switching Performance (SCIS 2.5 2.25 2.0 ...
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TYPICAL ELECTRICAL CHARACTERISTICS COLLECTOR−TO−EMITTER VOLTAGE (V) CE Figure 7. On−Region Characteristics @ T = 1755C J 10,000 1000 V = − 100 ...
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TYPICAL ELECTRICAL CHARACTERISTICS 100 V GE Single Pulse T = 25° Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) 0.1 1 Figure 13. Forward Biased Safe Operating 1 Duty Cycle ...
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... N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1.016 5.08 0.04 0.20 3.05 0.12 mm SCALE 3:1 inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGB8207AN/D ...