BSS223PW Infineon Technologies Corporation, BSS223PW Datasheet
BSS223PW
Available stocks
Related parts for BSS223PW
BSS223PW Summary of contents
Page 1
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated Type Package BSS 223PW PG-SOT-323 Maximum Ratings Parameter Continuous drain current T =25° =70°C A ...
Page 2
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient, leaded Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I =-250µ Gate threshold voltage =-1.5µA D ...
Page 3
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
Page 4
Power dissipation tot A BSS 223PW 0.28 W 0.24 0.22 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0. Safe operating area ...
Page 5
Typ. output characteristic parameter =25° 0.5 10V 0.4 0.3 0.2 0 0.3 0.6 7 Typ. transfer characteristics ...
Page 6
Drain-source on-resistance DS(on) parameter -0. 1.6 1.2 1 0.8 0.6 0.4 0.2 0 -60 - Typ. capacitances parameter: V =0, ...
Page 7
Typ. avalanche energy par - 0.8 0.6 0.4 0 100 15 ...
Page 8
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...