SIB419DK Vishay, SIB419DK Datasheet - Page 3

• Manufacturer Part Number: SIB419DK
• Description: P-channel 12-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70440
S-80515-Rev. C, 10-Mar-08
0.30
0.24
0.18
0.12
0.06
0.00
On-Resistance vs. Drain Current and Gate Voltage
15
12
5
4
3
2
1
0
9
6
3
0
0.0
0
0
I
D
= 5.2 A
0.6
2
3
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
V
- Total Gate Charge (nC)
GS
I
D
Gate Charge
V
1.2
- Drain Current (A)
= 1.8 V
GS
4
6
= 5 thru 3 V
V
V
DS
V
GS
DS
= 6 V
1.8
= 2.5 V
6
9
= 9.6 V
V
V
V
GS
GS
V
GS
GS
2.4
12
8
= 2 V
= 1.5 V
= 2.5 V
= 4.5 V
New Product
3.0
10
15
1000
800
600
400
200
3.0
2.4
1.8
1.2
0.6
0.0
1.8
1.5
1.2
0.9
0.6
0.3
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
0.4
2
V
V
GS
Transfer Characteristics
C
DS
T
0
oss
J
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
J
0.8
T
4
= 25 °C
J
Capacitance
25
= 125 °C
C
1.2
iss
50
6
V
I
D
Vishay Siliconix
GS
= 4.4 A
T
= 2.5 V
75
J
1.6
= - 55 °C
V
I
SiB419DK
8
D
GS
= 0.94 A
100
= 1.8 V
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V
I
D
2.0
GS
10
= 5.2 A
125
= 4.5 V
2.4
150
12
3