SIB452DK Vishay, SIB452DK Datasheet

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SIB452DK

Manufacturer Part Number
SIB452DK
Description
N-channel 190-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIB452DK-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SIB452DK-T1-GE3
Manufacturer:
LT
Quantity:
268
Part Number:
SIB452DK-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 68832
S-81724-Rev. A, 04-Aug-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
C
190
1.60 mm
= 25 °C.
6
(V)
PowerPAK SC-75-6L-Single
D
5
D
4
S
2.4 at V
2.6 at V
6.0 at V
D
1
h
R
S
ttp://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
1.60 mm
2
GS
GS
GS
G
= 4.5 V
= 2.5 V
= 1.8 V
(Ω)
J
3
= 150 °C)
b, f
N-Channel 190-V (D-S) MOSFET
Ordering Information: SiB452DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
D
Part # code
1.48
1.5
0.4
(A)
a
d, e
A
= 25 °C, unless otherwise noted
Q
Marking Code
Steady State
2.3 nC
g
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
New Product
t ≤ 5 s
A C X
X X X
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Lot Traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Boost Converter for Portable Devices
Symbol
Symbol
T
J
R
R
SC-75 Package
- Small Footprint Area
- Low On-Resistance
V
V
I
P
, T
DM
I
I
thJC
GS
thJA
DS
D
S
D
stg
®
Power MOSFET
Typical
7.5
41
- 55 to 150
0.67
0.53
0.67
2.4
1.6
Limit
± 16
1.24
190
260
1.5
1.5
1.5
8.4
13
b, c
b, c
b, c
b, c
b, c
Maximum
9.5
51
Vishay Siliconix
G
SiB452DK
®
N-Channel MOSFET
www.vishay.com
°C/W
D
S
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SIB452DK Summary of contents

Page 1

... 1. Ordering Information: SiB452DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SiB452DK Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 68832 S-81724-Rev. A, 04-Aug-08 New Product thru 2 4.5 V 0.9 1.2 1 152 SiB452DK Vishay Siliconix 1.0 0.8 0.6 0 ° 125 °C C 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 210 180 C 150 iss ...

Page 4

... SiB452DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 °C J 0.1 0.01 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 1.3 1.2 1 1.0 0.9 0.8 0.7 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product °C J 0.8 1 250 µA 10 100 125 150 10 Limited by R ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68832 S-81724-Rev. A, 04-Aug-08 New Product 15 12 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiB452DK Vishay Siliconix 100 125 T - Case Temperature (° ...

Page 6

... SiB452DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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