SIB417EDK Vishay, SIB417EDK Datasheet - Page 5

• Manufacturer Part Number: SIB417EDK
• Description: P-channel 1.2-v G-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68699
S-81192-Rev. A, 26-May-08
1.5
1.2
0.9
0.6
0.3
0.0
15
12
9
6
3
0
0
0
Package Limited
25
25
Power Junction-to-Ambient
T
A
T
- Ambient Temperature (°C)
C
Current Derating*
50
50
- Case Temperature (°C)
75
75
100
100
0.01
100
0.1
10
1
0.1
125
125
Single Pulse
* V
T
Safe Operating Area, Junction-to-Case
A
GS
= 25 °C
> minimum V
V
New Product
150
150
DS
Limited by R
- Drain-to-Source Voltage (V)
GS
at which R
DS(on)
* The power dissipation P
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
1
*
DS(on)
16
12
8
4
0
BVDSS
Limited
0
is specified
25
100 µs
1 ms
10 ms
100 ms
1 s
DC
10 s
10
Power Junction-to-Case
T
C
D
50
- Case Temperature (°C)
is based on T
75
Vishay Siliconix
SiB417EDK
100
J(max)
www.vishay.com
= 150 °C, using
125
150
5