SIA413DJ Vishay, SIA413DJ Datasheet - Page 3
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SIA413DJ
Manufacturer Part Number
SIA413DJ
Description
P-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SIA413DJ.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SIA413DJ-T1-GE3
Manufacturer:
IDT
Quantity:
97
Part Number:
SIA413DJ-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70447
S-80435-Rev. C, 03-Mar-08
0.08
0.07
0.06
0.05
0.04
0.03
0.02
On-Resistance vs. Drain Current and Gate Voltage
40
32
24
16
8
0
8
6
4
2
0
0.0
0
0
V
I
D
GS
= 10 A
0.5
= 1.8 V
8
8
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
1.0
V
- Total Gate Charge (nC)
I
DS
D
Gate Charge
- Drain Current (A)
16
16
= 6 V
1.5
24
24
V
GS
V
2.0
GS
= 2.5 V
V
DS
= 5 thru 2.5 V
V
GS
= 9.6 V
V
V
V
32
32
GS
GS
GS
= 4.5 V
2.5
= 1.5 V
= 2 V
= 1 V
New Product
3.0
40
40
3000
2500
2000
1500
1000
500
1.2
1.1
1.0
0.9
0.8
10
8
6
4
2
0
0
- 50
0.0
0
I
D
C
On-Resistance vs. Junction Temperature
= 6.7 A
rss
- 25
C
0.3
iss
V
V
DS
T
3
Transfer Characteristics
0
GS
J
T
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
oss
= 125 °C
Capacitance
25
0.6
T
C
V
= 25 °C
GS
50
6
Vishay Siliconix
= 4.5 V, 2.5 V
0.9
V
75
GS
SiA413DJ
= 4.5 V, 2.5 V
www.vishay.com
100
9
T
1.2
C
= - 55 °C
125
150
1.5
12
3