BSO612CVG Infineon Technologies Corporation, BSO612CVG Datasheet - Page 9

• Manufacturer Part Number: BSO612CVG
• Description: Complementary Mosfets 60v Small-signal-transistor
• Manufacturer: Infineon Technologies Corporation

Drain-source on-resistance (N-Ch.)
R
parameter : I
Gate threshold voltage (N-Ch.)
V
parameter: V
GS(th)
DS(on)
W
0.34
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
V
V
V
V
5.0
5.0
5.0
5.0
4.0
4.0
4.0
4.0
3.5
3.5
3.5
3.5
3.0
3.0
3.0
3.0
2.5
2.5
2.5
2.5
2.0
2.0
2.0
2.0
1.5
1.5
1.5
1.5
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.0
0.0
0.0
0.0
-60
-60
-60
-60
-60
BSO 612 CV
= f ( T j )
= f ( T
-20
-20
-20
-20
-20
D
GS
j
)
= 3 A , V
= V
20
98%
20
20
20
20
typ
DS
98%
2%
typ
, I
60
GS
D
60
60
60
60
= 20 µA
= 10 V
100
100
100
100
100
°C
Rev. 2.0
°C
°C
°C
°C
T
T
T
T
T
j
j
j
j
j
180
160
160
160
160
Page 9
Drain-source on-resistance (P-Ch.)
R
parameter : I
Gate threshold voltage (P-Ch.)
V
parameter: V
DS(on)
GS(th)
0.80
W
0.60
0.50
0.40
0.30
0.20
0.10
0.00
-5.0
-5.0
-5.0
-5.0
V
V
V
V
-4.0
-4.0
-4.0
-4.0
-3.5
-3.5
-3.5
-3.5
-3.0
-3.0
-3.0
-3.0
-2.5
-2.5
-2.5
-2.5
-2.0
-2.0
-2.0
-2.0
-1.5
-1.5
-1.5
-1.5
-1.0
-1.0
-1.0
-1.0
-0.5
-0.5
-0.5
-0.5
0.0
0.0
0.0
0.0
-60
-60
-60
-60
-60
BSO 612 CV
= f ( T j )
= f ( T
-20
-20
-20
-20
-20
D
GS
j
)
= -2 A , V
= V
20
98%
20
20
20
20
typ
98%
DS
typ
2%
, I
60
D
GS
60
60
60
60
= -450 µA
BSO 612 CV G
= -10 V
100
100
100
100
100
2006-08-25
°C
°C
°C
°C
°C
T
T
T
T
T
j
j
j
j
j
180
160
160
160
160