BSO613SPVG Infineon Technologies Corporation, BSO613SPVG Datasheet - Page 7

• Manufacturer Part Number: BSO613SPVG
• Description: P-channel Mosfets Power-transistor
• Manufacturer: Infineon Technologies Corporation

Drain-source on-state resistance
R
parameter : I
Typ. capacitances
C = f ( V
parameter: V
Rev.1.3
DS(on)
pF
W
0.34
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
10
10
10
10
-60
4
3
2
1
0
BSO613SPV
DS
= f ( T
)
-5
-20
D
GS
j
)
-10
= -3.44 A, V
=0V, f =1 MHz
20
98%
-15
typ
-20
60
GS
-25
100
= -10 V
-30
C
C
C
°C
iss
oss
rss
V
T
V
j
DS
180
-40
Page 7
Gate threshold voltage
V
parameter: V
Forward characteristics of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
-5.0
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
V
A
0.0
-1
-60
0.0
2
1
0
BSO613SPV
= f ( T j )
SD
-0.4
)
-20
GS
-0.8
p
= V
20
= 80 µs
-1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
, I
60
-1.6
D
= 1 mA
BSO613SPV G
-2.0
100
2007-03-02
-2.4
°C
V
V
T
98%
typ.
2%
SD
j
-3.0
180