... This data is derived from development material and does not necessarily mean that the device will go into production SYMBOL V DS =25°C I amb stg SYMBOL = 25°C* P tot 3 - 321 ZDM4306N SM-8 (8 LEAD SOT223) VALUE UNIT -55 to +150 °C VALUE UNIT 2 mW/ °C 24 mW/ °C 50.0 °C/ W 41.6 °C/ W ...
... ZDM4306N ELECTRICAL CHARACTERISTICS (at T PARAMETER SYMBOL MIN. Drain-Source BV Breakdown Voltage Gate-Source Threshold V GS(th) Voltage Gate-Body Leakage I GSS Zero Gate Voltage Drain I DSS Current On-State Drain I D(on) Current(1) Static Drain-Source R DS(on) On-State Resistance (1) Forward g fs Transconductance (1)(2) Input Capacitance (2) C iss Common Source Output C oss Capacitance (2) ...
... Transconductance v drain current v Temperature iss oss 2 C rss Gate charge v gate-source voltage 3 - 323 ZDM4306N V =3V 3. 10V Drain Current (Amps 10V DS Drain Current (Amps) ...
