UPA1727 Renesas Electronics Corporation., UPA1727 Datasheet

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UPA1727

Manufacturer Part Number
UPA1727
Description
Switching N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1727.pdf (8 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
UPA1727G-E1
Manufacturer:
NEC
Quantity:
10 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
UPA1727G-E1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DESCRIPTION
designed for high current switching applications.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW
The PA1727 is N-Channel MOS Field Effect Transistor
Single chip type
Low on-state resistance
R
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
3. Starting T
iss
G14330EJ3V0DS00 (3rd edition)
March 2002 NS CP(K)
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PA1727G
= 14 m
= 17 m
= 19 m
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
= 2400 pF TYP.
10 s, Duty Cycle
TYP. (V
TYP. (V
TYP. (V
ch
Note1
= 25°C, V
Note3
Note3
DS
A
GS
GS
GS
GS
= 25°C)
= 0 V)
= 0 V)
= 10 V, I
= 4.5 V, I
= 4.0 V, I
DD
N-CHANNEL POWER MOS FET
Power SOP8
= 30 V, R
PACKAGE
Note2
1%
D
D
D
= 5.0 A)
= 5.0 A)
= 5.0 A)
A
= 25°C, All terminals are connected.)
The mark
I
G
I
D(pulse)
V
V
D(DC)
T
E
T
= 25
P
I
DATA SHEET
DSS
GSS
AS
stg
AS
ch
T
SWITCHING
2
–55 to + 150
V
x 2.2 mm
GS
shows major revised points.
MOS FIELD EFFECT TRANSISTOR
±20
±10
±40
150
200
= 20
2.0
60
10
0 V
mJ
°C
°C
W
V
V
A
A
A
8
1
PACKAGE DRAWING (Unit: mm)
5.37 Max.
0.40
1.27
+0.10
–0.05
0.78 Max.
5
4
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
©
1, 2, 3
4
5, 6, 7, 8
PA1727
0.5 ±0.2
6.0 ±0.3
4.4
Source
; Source
; Gate
; Drain
Drain
1999, 2000, 2001
Body
Diode
0.8
0.10

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UPA1727 Summary of contents

Page 1

N-CHANNEL POWER MOS FET DESCRIPTION The PA1727 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Single chip type Low on-state resistance TYP DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Case Temperature - C C FORWARD BIAS SAFE OPERATING AREA 100 ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 0.1 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 Pulsed 150˚C ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 4 100 T - ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 0.1 10 100 Inductive Load - H ...

Page 7

Data Sheet G14330EJ3V0DS PA1727 7 ...

Page 8

The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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