NTLJD3182FZ ON Semiconductor, NTLJD3182FZ Datasheet - Page 2

• Manufacturer Part Number: NTLJD3182FZ
• Description: Power Mosfet And Schottky Diode
• Manufacturer: ON Semiconductor

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm
THERMAL RESISTANCE RATINGS
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient – t ≤ 5 s (Note 3)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature Coeffi-
cient
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Recovery Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Parameter
Parameter
V
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
Q
t
(BR)DSS
C
t
C
d(OFF)
GS(TH)
I
C
G(TOT)
Q
I
DS(on)
Q
d(ON)
Q
V
g
DSS
GSS
G(TH)
t
OSS
RSS
RR
t
t
ISS
t
t
FS
GS
GD
SD
RR
a
b
r
f
/T
/T
J
J
(T
J
V
= 25°C unless otherwise noted)
http://onsemi.com
V
DS
GS
V
= −16 V, V
V
V
= 0 V, I
GS
I
GS
V
V
V
V
GS
D
V
V
V
V
I
GS
GS
GS
D
GS
DS
DS
GS
GS
= −250 mA, Ref to 25°C
= 0 V, d
= −4.5 V, V
= −4.5 V, V
= −2.0 A, R
Test Conditions
2
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= V
= −16 V, I
= 0 V, V
= 0 V, f = 1.0 MHz,
= 0 V, I
S
V
I
I
D
DS
S
= −1.0 A
DS
GS
= −2.0 A
= −1.0 A
ISD
, I
= −10 V
= 0 V
D
D
GS
/d
= −250 mA
DD
D
DS
= −250 mA
D
D
D
G
t
= ±8.0 V
= 100 A/ms,
= −2.0 A
= −2.0 A
= −2.0 A
= −1.7 A
= 2.0 W
= −5.0 V,
= −10 V,
T
T
T
T
J
2
J
J
J
, 2 oz Cu).
= 125°C
= 25°C
= 85°C
= 25°C
Symbol
R
R
R
qJA
qJA
qJA
−0.4
Min
−20
−0.73
−0.62
0.84
12.5
Typ
125
450
2.0
6.5
5.2
0.3
1.5
6.6
9.0
13
68
90
90
62
14
23
13
10
10
Max
177
83
54
Max
−1.0
−1.0
−1.0
−10
±10
100
144
200
7.8
°C/W
Unit
mV/°C
mV/°C
Unit
mW
nC
nC
mA
mA
pF
ns
ns
V
V
S
V